Optical properties of epitaxial ZnO layers have been studied in the spectral region from 1.5 to 5.4 eV using four-zone null spectroscopic ellipsometry. An existing model dielectric function based on excitonic structure near direct band gap has been improved by including a high-energy absorption term. Surface layer, corresponding to the surface roughness, was found to be essential to fit the spectroellipsometric data obtained. Two kinds of samples have been studied: ZnO layers prepared on (0001) and (112̄0)-oriented sapphire substrates. The surfaces of the first ones were found to be more rough.

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Silicon dioxide electret generated by doping potassium ions will be demonstrated by forming it on a comb-drive actuator. The comb-drive actuator made of silicon on an insulator substrate is oxidized with bubbling a stream of KOH solution to form silicon oxide film including potassium ions uniformly on the etched side walls of comb electrodes. After a bias-temperature procedure at about 900–1000 K and 100 V was applied to the device, we confirmed a 40 V built-in potential difference between the opposing comb electrodes. The gradual decay of the potential was observed, but 35 V was maintained even after 1 month.