We propose and experimentally demonstrate a novel multimode ultra-compact mode (de)multiplexer for highly integrated on-chip mode-division multiplexing systems. This device is composed of a wide divergence angle asymmetric Y-junction based on subwavelength structure and optimized using an inverse design method. The proposed device occupied a footprint of only 2.4 × 3 µm. The measured insertion loss and crosstalk were less than 1dB and -24 dB from 1530 nm to 1590 nm for both TE mode and TE mode, respectively. Likewise, a three mode multiplexer is also designed and fabricated with a compact footprint of 3.6 × 4.8 µm. Furthermore, our scheme could also be expanded to include more modes.

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A high-efficiency inverse design of “digital” subwavelength nanophotonic devices using the adjoint method is proposed. We design a single-mode 3 dB power divider and a dual-mode demultiplexer to demonstrate the efficiency of the proposed inverse design approach, called the digitized adjoint method, for single- and dual-object optimization, respectively. The optimization comprises three stages: 1) continuous variation for an “analog” pattern; 2) forced permittivity biasing for a “quasi-digital” pattern; and 3) a multilevel digital pattern. Compared with the conventional brute-force method, the proposed method can improve design efficiency by about five times, and the performance optimization can reach approximately the same level. The method takes advantages of adjoint sensitivity analysis and digital subwavelength structure and creates a new way for the efficient and high-performance design of compact digital subwavelength nanophotonic devices, which could overcome the efficiency bottleneck of the brute-force method, which is restricted by the number of pixels of a digital pattern, and improve the device performance by extending a conventional binary pattern to a multilevel one.

We propose and experimentally demonstrate a novel ultracompact multimode waveguide crossing. The compact asymmetric subwavelength Y-junction is introduced to convert the high-order modes into fundamental ones, enabling one to implement three or more modes simultaneously in the subsequent processing. Our proposed device occupied only a compact footprint of 34 × 34 µm 2 . The measured results indicate our fabricated device exhibited a high performance with the insertion loss less than 0.9 dB, crosstalk lower than -24 dB from 1.52 to 1.60 µm for all the three modes. Moreover, our scheme could be easily expended to implement more modes and will show great potential in dense and large-scale on-chip photonic integration.

Inverse-designed free-form nanophotonic structures have shown great potential in designing ultra-compact integrated photonic devices, but strict fabrication requirements may hinder further applications. We propose here a photonic-crystal-like (PhC-like) subwavelength structure, which is insensitive to the lag effect that is the most common fabrication error. A colorless 3 dB coupler employing such a structure is designed, fabricated, and characterized. With only one-step etching, the coupling region of our final device occupies a compact footprint of 2.72×2.72  μm. The simulated insertion loss of each output port is about 3.2 dB over 100 nm bandwidth around 1550 nm, and the measured insertion losses of both ports are 3.35 dB, on average, over the observable 60 nm bandwidth with a near zero loss imbalance.

An ultracompact broadband dual-mode 3 dB power splitter using inverse design method for highly integrated on-chip mode (de) multiplexing system is proposed and experimentally demonstrated. A dual-mode convertor based on subwavelength axisymmetric three-branch waveguide is utilized to convert TE and TE to three intermediate fundamental modes. The axisymmetric topology constraint of the nanostructures enables the optimized device to achieve a strict 50:50 splitting ratio over a broad wavelength range from 1.52 to 1.60 µm. The fabricated device occupied a compact footprint of only 2.88 µm × 2.88 µm. The measured average excess losses and crosstalks for both modes were respectively less than 1.5 dB and -20 dB from 1.52 to 1.58 µm for both TE and TE, which are consistent with the numerical simulations.

With the development of highly densified photonic integrated circuits, the optical cross nodes number exhibits dramatically increasing. Not only efficient but also ultra-compact waveguide crossings are required to materialize the full potential of silicon photonics for on-chip optical intercross connect. In this work, we proposed several inverse-designed 4 × 4, 5 × 5 and 6 × 6 star-crossings based on the photonic-crystal-like (PhC-like) subwavelength structures, which have ultra-high port density of about 7.1 μm/port, 5.83 μm/port and 7.3 μm/port respectively. Moreover, the star-crossings are practically fabricated and experimentally characterized. The average measured insertion losses (ILs) are less than 0.75, 0.9 dB and 1.5 dB, while the crosstalks are sub-22.5 dB, -20 dB and -18 dB for other output ports over 60 nm bandwidth centered at 1550 nm wavelength.

We propose and experimentally demonstrate a novel ultracompact silicon polarization rotator based on equivalent asymmetric waveguide cross section in only single-step etching procedure for densely integrated on-chip mode-division multiplexing system. In the conventional mode hybridization scheme, the asymmetric waveguide cross section is employed to excite the hybridized modes to realize high performance polarization rotator with compact footprint and high polarization extinction ratio. However, the fabrication complexity severely restricts the potential application of asymmetric waveguide cross section. We use inverse-designed photonic-crystal-like subwavelength structure to realize an equivalent asymmetric waveguide cross section, which can be fabricated in only single-step etching process. Besides, a theory-assisted inverse design method based on a manually-set initial pattern is employed to optimize the device to improve design efficiency and device perform. The fabricated device exhibited high performance with a compact footprint of only 1.2 × 7.2 µm2, high extinction ratio (> 19 dB) and low insertion loss (< 0.7 dB) from 1530 to 1590 nm.