Materials can be transformed from one crystalline phase to another by using an electric field to control ion transfer, in a process that can be harnessed in applications such as batteries, smart windows and fuel cells. Increasing the number of transferrable ion species and of accessible crystalline phases could in principle greatly enrich material functionality. However, studies have so far focused mainly on the evolution and control of single ionic species (for example, oxygen, hydrogen or lithium ions). Here we describe the reversible and non-volatile electric-field control of dual-ion (oxygen and hydrogen) phase transformations, with associated electrochromic and magnetoelectric effects. We show that controlling the insertion and extraction of oxygen and hydrogen ions independently of each other can direct reversible phase transformations among three different material phases: the perovskite SrCoO (ref. 12), the brownmillerite SrCoO (ref. 13), and a hitherto-unexplored phase, HSrCoO. By analysing the distinct optical absorption properties of these phases, we demonstrate selective manipulation of spectral transparency in the visible-light and infrared regions, revealing a dual-band electrochromic effect that could see application in smart windows. Moreover, the starkly different magnetic and electric properties of the three phases-HSrCoO is a weakly ferromagnetic insulator, SrCoO is a ferromagnetic metal, and SrCoO is an antiferromagnetic insulator-enable an unusual form of magnetoelectric coupling, allowing electric-field control of three different magnetic ground states. These findings open up opportunities for the electric-field control of multistate phase transformations with rich functionalities.

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Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. Although Lorentz invariance is required in high energy physics, it is not necessarily obeyed in condensed matter physics, and thus Lorentz-violating type-II Weyl/Dirac fermions could be realized in topological semimetals. The recent realization of type-II Weyl fermions raises the question whether their spin-degenerate counterpart—type-II Dirac fermions—can be experimentally realized too. Here, we report the experimental evidence of type-II Dirac fermions in bulk stoichiometric PtTe2 single crystal. Angle-resolved photoemission spectroscopy measurements and first-principles calculations reveal a pair of strongly tilted Dirac cones along the Γ-A direction, confirming PtTe2 as a type-II Dirac semimetal. Our results provide opportunities for investigating novel quantum phenomena (e.g., anisotropic magneto-transport) and topological phase transition.

Atomically thin PtSe 2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality, single crystalline thin films with large size is critical. Here we report the first successful layer-by-layer growth of high quality PtSe 2 films by molecular beam † The authors declare no competing financial interest. 1 arXiv:1703.04279v2 [cond-mat.mtrl-sci] 15 Mar 2017 epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and X-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films for investigating the physical properties and potential applications of PtSe 2 . KeywordsPtSe 2 , Molecular beam epitaxy (MBE), Raman, ARPES, Transition metal dichalcogenide (TMDC) Layered transition metal dichalcogenides (TMDCs) have attracted extensive interests for applications in electronics, optoelectronics and valleytronics due to the strong spin-orbit coupling, sizable band gap and tunability of the electronic structure by quantum confinement effect. [1][2][3][4] In the past decade, this has been witnessed by the significant efforts conducted on the atomically thin MoS 2 film. 5-7 However, its low mobility has limited applications, for inbstance, in high speed electronics. 8,9 Finding thin films of other TMDC with better properties is highly desirable. PtSe 2 has emerged as an interesting compound that belongs to TMDC.Although the bulk crystal is a semimetal, 10,11 monolayer (ML) platinum diselenide (PtSe 2 ) has been revealed to be a semiconductor with a band gap of ≈ 1.2 eV. 12 Importantly, the charge-carrier mobility of PtSe 2 has been predicted among the highest in TMDCs 9 and has been experimentally shown to be comparable to black phosphorene 13 yet with the advantage of much improved stability. 14 This makes PtSe 2 a promising candidate for high-speed electronics. Moreover, the hidden helical spin texture with spin-layer locking in monolayer PtSe 2 has been recently revealed, 15 and such spin physics induced by a local Rashba effect has great potential for electric field tunable spintronic devices. 16 In addition, remarkable performance

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Graphene/hexagonal boron nitride (h-BN) has emerged as a model van der Waals heterostructure 1 as the superlattice potential, which is induced by lattice mismatch and crystal orientation, gives rise to various novel quantum phenomena, such as the self-similar Hofstadter butterfly states 2-5 . Although the newly generated second-generation Dirac cones (SDCs) are believed to be crucial for understanding such intriguing phenomena, fundamental knowledge of SDCs, such as locations and dispersion, and the e ect of inversion symmetry breaking on the gap opening, still remains highly debated due to the lack of direct experimental results. Here we report direct experimental results on the dispersion of SDCs in 0 • -aligned graphene/h-BN heterostructures using angle-resolved photoemission spectroscopy. Our data unambiguously reveal SDCs at the corners of the superlattice Brillouin zone, and at only one of the two superlattice valleys. Moreover, gaps of approximately 100 meV and approximately 160 meV are observed at the SDCs and the original graphene Dirac cone, respectively. Our work highlights the important role of a strong inversion-symmetry-breaking perturbation potential in the physics of graphene/h-BN, and fills critical knowledge gaps in the band structure engineering of Dirac fermions by a superlattice potential.Hexagonal boron nitride (h-BN) shares a similar honeycomb lattice structure to graphene, yet its lattice is stretched by 1.8%. Moreover, the breaking of the inversion symmetry by distinct boron and nitrogen sublattices leads to a large bandgap (5.97 eV) in the π band, which is in sharp contrast to the gapless Dirac cones in graphene. By stacking graphene atop h-BN to form a van der Waals heterostructure 1 , graphene/h-BN not only exhibits greatly improved properties for device applications, such as reduced ripples, suppressed charge inhomogeneities and higher mobility 6,7 , but also provides unique opportunities for band structure engineering of Dirac fermions by a periodic potential 8,9 . The superlattice potential induced by the lattice mismatch and crystal orientation can significantly modify the electronic properties of graphene and lead to various novel quantum phenomena, for example, the emergence of second-generation Dirac cones (SDCs), which are crucial for the realization of Hofstadter butterfly states under an applied magnetic field 2-5 , renormalization of the Fermi velocity 8,[10][11][12] , gap opening at the Dirac point 4,13-16 , topological currents 15 and gate-dependent pseudospin mixing 17 . Hence, understanding the effects of the superlattice potential on the band structure of graphene is crucial for advancing its device applications, and for gaining new knowledge about the fundamental physics of Dirac fermions in a periodic potential.Previously, the existence of SDCs has been deduced from scanning tunnelling spectroscopy, resistivity and capacitance measurements 2,5,18,19 . However, such measurements are not capable of mapping out the electronic dispersion with momentum-resolved informatio...

The generally accepted view that spin polarization in non-magnetic solids is induced by the asymmetry of the global crystal space group has limited the search for spintronics materials mainly to non-centrosymmetric materials. In recent times it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here, by using spin- and angle-resolved photoemission spectroscopy, we report the observation of helical spin texture in monolayer, centrosymmetric and semiconducting PtSe2 film without the characteristic spin splitting in conventional Rashba effect (R-1). First-principles calculations and effective analytical model analysis suggest local dipole induced Rashba effect (R-2) with spin-layer locking: opposite spins are degenerate in energy, while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of the spin polarization physics but also may find applications in electrically tunable spintronics.

The interplay between disorder and superconductivity is a subtle and fascinating phenomenon in quantum many body physics. The conventional superconductors are insensitive to dilute nonmagnetic impurities, known as the Anderson's theorem 1 .Destruction of superconductivity and even superconductor-insulator transitions 2-10 occur in the regime of strong disorder. Hence disorder-enhanced superconductivity is rare and has only been observed in some alloys or granular states 11-17 . Because of the entanglement of various effects, the mechanism of enhancement is still under debate.Here we report well-controlled disorder effect in the recently discovered monolayer