It
is crucial to realize high photoresponsivity and a fast response
speed to meet the application requirements of solar blind ultraviolet
(SBUV) photodetectors (PDs) in wireless communication, fire warning,
and other fields. Such high-performance PDs depend on high-quality
films. In this paper, a nonequilibrium MOCVD growth scheme is reported
to obtain Mg-alloyed Ga2O3 films with single
crystal orientation. On the basis of this film, the fabricated PD
exhibits a large on/off ratio of approximately 105 (I
254 nm light/I
dark), ultrahigh external quantum efficiency of 4341%, and
high photoresponsivity
of 8.9 A/W under 3 V bias. The performance of this device is greatly
enhanced compared to the performances of those PDs based on amorphous
gallium oxide films previously reported, which is attributed to the
fewer number of grain boundaries of the single crystal orientation
Ga2O3 films. Furthermore, it is found that under
the same growth conditions, Ga2O3 films doped
with an appropriate amount of acceptor impurity Mg possess less oxygen
vacancies and better crystal quality, compared with unalloyed Ga2O3 films. The characterizations indicate that the
Mg-alloyed Ga2O3 films with single crystal orientation
grown by the nonequilibrium MOCVD scheme are feasible for preparing
high-performance SBUV PDs.
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