The nanoscale ion ordering of ionic liquids at confined interfaces under high pressures was investigated in this study. 1-Hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([HMIM][NTf2])/poly(vinylidene fluoride-co-hexafluoropropylene) (PVdF-co-HFP) and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][NTf2])/PVdF-co-HFP were prepared and characterized by using high-pressure infrared spectroscopy. Under ambient pressure, imidazolium C2–H and C4,5–H absorptions were blue-shifted in frequency due to the presence of PVdF-co-HFP. However, the absorption of anionic νa SO2 did not reveal any significant shifts in frequency upon dilution by PVdF-co-HFP. The experimental results suggest that PVdF-co-HFP disturbs the local structures of the imidazolium C–H groups instead of the anionic SO2 groups. The frequency shifts of C4,5–H became dramatic for the mixtures at high pressures. These results suggest that pressure-enhanced ionic liquid–polymer interactions may play an appreciable role in IL-PVdF-co-HFP systems under high pressures. The pressure-induced blue-shifts due to the PVdF-co-HFP additions were more obvious for the [HMIM][NTf2] mixtures than for [EMIM][NTf2] mixtures.
This paper investigates abnormal dimension-dependent thermal instability in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Device dimension should theoretically have no effects on threshold voltage, except for in short channel devices. Unlike short channel drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, for devices with either a relatively large channel width or a short channel length, the output drain current decreases instead of saturating with an increase in drain voltage. Moreover, the wider the channel and the shorter the channel length, the larger the threshold voltage and output on-state current degradation that is observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider/shorter channel length devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast ID-VG and modulated peak/base pulse time ID-VD measurements are utilized to demonstrate the self-heating induced anomalous dimension-dependent threshold voltage variation and on-state current degradation.
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