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The effect of oxygen (O) content on the electrical properties of physical-vapor-deposited nickel oxide (PVD-NiO) was studied. When the NiO target was sputtered, introducing O 2 can lead to the formation of Ni 3+ ions in the deposited film. These Ni 3+ ions can act as acceptors. However, there were too many Ni 3+ ions that were obtained following the introduction of O atoms. It resulted in intensive p-type conduction and made the O 2 -introduced PVD-NiO behave as a conductor. Thus, it was possible to reduce the O content of PVD-NiO to obtain a p-type semiconductor. In this study, a transparent PVD-NiO film with a carrier concentration of 1.62 ' 10 17 cm %3 and a resistivity of 3.74 Ω cm was sputter-deposited within pure argon plasma. The thin-film transistor (TFT) employing this proposed PVD-NiO can result in good current switching, and even operated at very low drain-source voltage. The ON/OFF current ratio, field-effect carrier mobility, and threshold voltage of the proposed NiO TFT were 3.61 ' 10 4 , 1.09 cm 2 V %1 s %1 and %3.31 V, respectively.