A new GaAs vapor-phase epitaxial (VPE) technique using trimethylgallium (TMG) and arsenic trichloride (AsC13) has been developed. This VPE is free from the source instability in chloride VPE and fatally toxic arsine (ASH3) in hydride and metalorganic VPE. The growth reaction is based on the gallium chloride transport method. Growth rates of 300-4000 A/rain were obtained at growth temperatures between 650 ~ and 780~ At III/V ratios below 2.3, the growth rate increased as the TMG flow rate increased and the AsC13 flow rate decreased. The growth rate was independent of the temperature in the gas mixing region of the reactor. High purity n-GaAs with a 77 K mobility of 36,000 cm~/Vs was obtained.
The diffusion rates of several acid dyes were determined using the unstretched nylon gut.The method consists of measuring the dye penetration from the observation of ring-dyed gut section by means of microscope.The pentration distance is proportional to the square root of dyeing time, and in general increases as the dye concentration increases and the pH of dyebath decreases:From the temperature dependence of diffusion rate the apparent activation energy of diffusion is calcurated.The diffusion rate varies from dye to dye but its temperature dependence remains almost the same. (Received 4. 1. 1956)
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