We derive an improved prescription for the merging of matrix elements with parton showers, extending the CKKW approach. A flavour-dependent phase space separation criterion is proposed. We show that this new method preserves the logarithmic accuracy of the shower, and that the original proposal can be derived from it. One of the main requirements for the method is a truncated shower algorithm. We outline the corresponding Monte Carlo procedures and apply the new prescription to QCD jet production in e + e − collisions and Drell-Yan lepton pair production. Explicit colour information from matrix elements obtained through colour sampling is incorporated in the merging and the influence of different prescriptions to assign colours in the large N C limit is studied. We assess the systematic uncertainties of the new method.
In this paper, we investigated the device performance and negative bias temperature instability (NBTI) degradation for thermally nitrided oxide (TNO) and plasma nitrided oxide (PNO) in nanoscale p-channel metal oxide semiconductor field effect transistor (PMOSFET). PNOs show the improvement of dielectric performance compared to TNO with no change of the device performance. PNOs also show the improvement of NBTI immunity than TNO at low temperature stress, whereas NBTI immunity of PNO with high N concentration can be worse than TNO at high temperature stress. Recovery effect of NBTI degradation of PNO is lower than that of TNO and it is increased as the N concentration is increased in PNO because the dissociated Si dangling bonds and generated positive oxide charges are repassivated and neutralized, respectively. Moreover, complete recovery of ÁV th is dominated by neutralization of positive oxide charges. Therefore, N contents at polycrystalline Si/SiO 2 interface as well as N contents at Si/SiO 2 interface can affect significantly on NBTI degradation and recovery effect.
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