Electron spectrum in cylindrical quantum dot HgS embedded into ZnS medium is calculated using the variational method with variational parameter in Hamiltonian. The dependence of energy spectrum on the quantum well sizes is established. The electron spectrum calculated in the framework of infinitely deep potential well is compared to the one obtained within the variational method. It is shown that the first method gives satisfactory results for the ground level only and at rather big sizes of quantum well.
The analytical and numerical calculations of electron and hole spectra renormalised by L-and I-phonons taking into account the configurational interaction are performed for the QD embedded into semiconductor medium exemplified by GaAs/Al x Ga 1−x As nanoheterosystems.It is established that for the nanosize QDs the shifts of electron and hole ground levels are created by the interaction of these quasiparticles with Land I-phonons due to all the states of discrete and continuous spectrum. For the small QDs, the shifts of ground energy levels have strong nonlinear dependences while for the big QDs, they almost do not depend on QD radius and have the magnitude close to the shifts of ground levels in massive crystal creating QD. Due to the different effective masses of light and heavy holes, the splittings of their ground levels are the complicated functions on QD radius and Al concentration in Al x Ga 1−x As medium.
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