We report on a first-principles study of the conductance through graphene suspended between Al contacts as a function of junction length, width, and orientation. The charge transfer at the leads and into the freestanding section gives rise to an electron-hole asymmetry in the conductance and in sufficiently long junctions induces two conductance minima at the energies of the Dirac points for suspended and clamped regions, respectively. We obtain the potential profile along a junction caused by doping and provide parameters for effective model calculations of the junction conductance with weakly interacting metallic leads.

Graphene antidot lattices have recently been proposed as a new breed of graphene-based superlattice structures. We study electronic properties of triangular antidot lattices, with emphasis on the occurrence of dispersionless (flat) bands and the ensuing electron localization. Apart from strictly flat bands at zero energy (Fermi level), whose existence is closely related to the bipartite lattice structure, we also find quasi-flat bands at low energies. We predict the real-space electron density profiles due to these localized states for a number of representative antidot lattices. We point out that the studied low-energy, localized states compete with states induced by the superlattice-scale defects in this system which have been proposed as hosts for electron spin qubits. Furthermore, we suggest that local moments formed in these midgap zero-energy states may be at the origin of a surprising saturation of the electron dephasing length observed in recent weak localization measurements in graphene antidot lattices.

We find that the statistics of electron transfer in a coherent quantum point contact driven by an arbitrary time-dependent voltage is composed of elementary events of two kinds: unidirectional one-electron transfers determining the average current and bidirectional two-electron processes contributing to the noise only. This result pertains at vanishing temperature while the extended Keldysh-Green's function formalism in use also enables the systematic calculation of the higher-order current correlators at finite temperatures.

We present a new first-order approach to strain-engineering of graphene's electronic structure where no continuous displacement field u(x, y) is required. The approach is valid for negligible curvature. The theory is directly expressed in terms of atomic displacements under mechanical load, such that one can determine if mechanical strain is varying smoothly at each unit cell, and the extent to which sublattice symmetry holds. Since strain deforms lattice vectors at each unit cell, orthogonality between lattice and reciprocal lattice vectors leads to renormalization of the reciprocal lattice vectors as well, making the K and K points shift in opposite directions. From this observation we conclude that no K−dependent gauges enter on a first-order theory. In this formulation of the theory the deformation potential and pseudo-magnetic field take discrete values at each graphene unit cell. We illustrate the formalism by providing strain-generated fields and local density of electronic states on graphene membranes with large numbers of atoms. The present method complements and goes beyond the prevalent approach, where strain engineering in graphene is based upon first-order continuum elasticity.