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A newly developed stochastic resist model, implemented in a prototype version of the PROLITH lithography simulation software is fitted to experimental data for a commercially available immersion ArF photoresist, EPIC 2013 (Dow Electronic Materials). Calibration is performed only considering the mean CD value through focus and dose for three line/space features of varying pitch (dense, semi-dense and isolated).An unweighted Root Mean Squared Error (RMSE) of approximately 2.0 nm is observed when the calibrated model is compared to the experimental data. Although the model is calibrated only to mean CD values, it is able to accurately predict LER through focus to better than 1.5 nm RMSE and highly accurate CDU distributions at fixed focus and dose conditions. It is also shown how a stochastic model can be used to the describe the bridging behavior often observed at marginal focus and exposure conditions.

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