We have measured the radiometric properties of two midwave infrared photodiode arrays (320×256pixel2 format) fabricated from the same wafer comprising a thin (0.24μm), not intentionally doped InAs∕GaSb superlattice between a p-doped GaSb layer and a n-doped InAs layer. One of the arrays was indium bump bonded to a silicon fanout chip to allow for the measurement of properties of individual pixels, and one was bonded to a readout integrated circuit to enable array-scale measurements and infrared imaging. The superlattice layer is thin enough that it is fully depleted at zero bias, and the collection efficiency of photogenerated carriers in the intrinsic region is close to unity. This simplifies the interpretation of photocurrent data as compared with previous measurements made on thick superlattices with complex doping profiles. Superlattice absorption coefficient curves, obtained from measurements of the external quantum efficiency using two different assumptions for optical coupling into the chip, bracket values calculated using an eight-band k∙p model. Measurements of the quantum efficiency map of the focal plane array were in good agreement with the single-pixel measurements. Imagery obtained with this focal plane array demonstrates the high uniformity and crystal quality of the type II superlattice material.
We report on the results oflaboratory and field tests on a pixel-registered, 2-color MWIR/LWIR256x256 QWIP FPA with simultaneous integrating capability. The FPA studied contained stacked QWIP structures with spectral peaks at 5.1 pm and 9.0 I.tm. Normally incident radiation was coupled into the devices using a diffraction grating designed to operate in both spectral bands. Each pixel is connected to the read-out integrated circuit by three bumps to permit the application of separate bias levels to each QWIP stack and allow simultaneous integration of the signal current in each band. We found the FPA to have high pixel operability, well balanced response, good imaging perfonnance, high optical fill factor, and low spectral crosstalk. We present data on measurements of the noise-equivalent temperature difference of the FPA in both bands as functions of temperature and bias. The FPA data are compared to single-pixel data taken on devices from the same wafer. We also present data on the sensitivity ofthis FPA to polarized light It is found that the LWIR portion ofthe device is very sensitive to the direction of polarization of the incident light The MWIR part of the device is relatively insensitive to the polarization. In addition, imagery was taken with this FPA of military targets in the field. Image fusion techniques were applied to the resulting images.
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