Phone: þ7 812 292 7124, Fax: þ7 812 297 1017 A 60 mW output power has been achieved in mid-UV (l ¼ 270 nm) spontaneous sources with electron-beam pulsescanning pumping, fabricated from AlGaN MQW heterostructures grown by PA MBE on c-Al 2 O 3 substrates. Under the CW pumping at much lower excitation power density the mid-UV sources demonstrate a 4.7 mW output power. In that regime the power efficiency of the structures is about 0.24%, while their internal quantum efficiency is estimated to be as high as 50%.
ZnSe-based electron-beam pumped vertical-cavity surface-emitting lasers for the green (λ = 530 nm) and blue (λ = 462 nm) spectral region have been realized. Structures with and without epitaxial bottom distributed Bragg reflector have been fabricated and characterized. The samples consist of an active region containing 20 quantum wells with a cavity length varying between an optical thickness of 10 λ to 20 λ. The active material is ZnCdSSe in case of the green devices and ZnSe for the blue ones. Room temperature single mode lasing for structures with and without epitaxial bottom mirror with a maximum output power up to 5.9 W (green) and 3.3 W (blue) is achieved, respectively.
E-beam pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection displays and a variety of applications typically associated with optically pumped lasers. For the first time an InGaN/GaN multiple quantum well (MQW) in-plane laser pumped by surface normal pulse and scanning electron beams was demonstrated. Pumping at room temperature (RT) and 80 K showed peak stimulated emission wavelengths of 402 and 409 nm with a full width half maximum (FWHM) of 0.6 nm and 1.2 nm, respectively. The threshold electron beam current densities have been estimated as 60 A/cm2 for 35 keV electron energy at 80 K using scanning e-beam pumping and 200-300 A/cm2 at RT using pulsed e-beam pumping with a maximum electron energy of 150 keV. At 80 K, light output of 150 mW was measured out of one facet at an e-beam current of 1.7 mA.
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