We have measured coercive field and switching voltage versus thickness in PbZr0.54Ti0.46O3 thin (0.15–0.50 μm) films, together with switching times and current transient shapes versus field and temperature. The results show activation fields of order 120 kV/cm at room temperature, threshold voltages below 1.3 V, and switching speeds faster than 100 ns, demonstrating that fast, nonvolatile memories can be constructed that are compatible with standard silicon or GaAs integrated circuit voltage levels, without the need for an internal voltage pump. The displacement current transient data yield 2.5 as the dimensionality of domain growth if one-step intial nucleation rate is assumed, and are compatible with the theory of Ishibashi, yielding imaxtmax/Ps=1.65±0.23, in comparison with the predicted 1.646. The switching time exhibits an activation field dependence upon both voltage and temperature through a single reduced parameter (TC−T)(VTC),−1 in accord with the theory of Orihara and Ishibashi.
The time dependence of the current transient i(t) produced by the reversal of domains in ferroelectric potassium nitrate thin-film memories of 75–300 nm is analyzed as a function of temperature and of thickness using the Avrami theory. For all the films the kinetics confirm the low-dimensional nature of the system
Using steady-shear rheometry in combination with high-pressure 11B nuclear magnetic resonance spectroscopy (11B NMR), we have found that gels formed from water-soluble polymers containing vicinal hydroxyl groups cross-linked with various boron-containing compounds undergo significant structural changes that result in a pronounced loss of viscosity when placed under pressure. Importantly, gels from other cross-linking agents tested, including Ti(IV) and Zr(IV), did not show this loss in viscosity. The experimental study probed pressure-induced changes to both galactomannan and polyvinyl alcohol (PVA) gels cross-linked with either aryl boronic acids or alkali metal boron-containing salts using pressure conditions that ranged from atmospheric to 680 bar and temperatures that ranged from 20 to 65 °C. Significantly, the pressure-induced losses in viscosity and, to a somewhat lesser extent, the concomitant pressure-induced 11B NMR spectral changes were found to be reversed upon lowering the pressure.
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