Photodiode nonlinearity measurements using one-, two- and three-tone measurement systems are compared with each other, to investigate the comparison accuracy between setups. The mathematical relationship between each setup is analyzed, and data on multiple devices are compared to find under which conditions the measurements are comparable. It is shown that the three measurement systems can be used interchangeably only when the distortion adheres to the expected mathematical slopes.
A novel photodiode is presented using a directional coupler incorporated with a UTC style photodiode with 0.88 A/W responsivity and 35 dBm OIP3 at 25 mA. The device responsivity is characterized at various photocurrents up to 10 mA and the OIP3 is measured up to 25 mA and 10 GHz. Additionally, the device capacitance is measured and used to model the capacitance limited OIP3 of the device. The failure of the device was compared to a traditional waveguide photodiode showing burnout no longer occurs at the front of the device and demonstrated the potential of the new design to control the photocurrent density profile for a waveguide style photodiode.
Generation of sub-MM waves and THz signals is a difficult challenge, which is being addressed by several research groups. We are using the approach of heterodyning two optical signals in a photo detector. The UTC-TW photo detector has been identified as the device of choice for high frequencies. In this paper we present a novel analytical model, which we have developed as a design tool for the above device. The model was validated for a 60 GHz device, and a new 120 GHz device has been designed. In addition performance limits for the UTC-TW PD are calculated by the new model, and it is shown that this device has the potential of delivering more than 1 mW of power at frequencies approaching 1 THz.
Voltage-dependent responsivity nonlinearities are characterized experimentally and analytically for unitraveling carrier directional coupled photodiodes (DCPD) with two types of design variations. OIP3 data follows the voltage-dependent responsivity predictions for both MMI width and PD width variations of the baseline DCPD. A maximum OIP3 of 39dBm was achieved for a device with a 3µm wide PD at 20mA and 4V.
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