This paper reports the growth and characterization of c-axis-oriented NbS 2 thin films on SiO 2 /Si substrate by ambient pressure chemical vapor deposition (CVD) using a generic metal chloride source.We found that NbS 2 nanosheets can be grown directly on the SiO 2 /Si substrate with the aid of hydrogen gas mixed in the carrier gas. Detailed examination of the growth parameters was made possible using a separateflow CVD apparatus. It appears that the major cause of the misorientation is the off-stoichiometry with surplus Nb. The quality of the films was evaluated by X-ray diffraction and Raman spectroscopy as well as resistivity measurements at low temperatures. They showed a resistivity minimum at the same temperature of the charge density wave (CDW) transition for a bulk single crystal of 3R-NbS 2 .
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