For the first time, to the best of our knowledge, we investigate the photonic band gap (PBG) structure through scanning the frequency detunings of the probe field, the dressing field, and the coupling field in the static and moving electromagnetically induced grating (EIG) field. When we scan the frequency detuning of the coupling field, the PBG structure and six-wave-mixing band gap signal (SWM BGS) appear at the right of the electromagnetically induced transparency (EIT) position. But the PBG structure and SWM BGS appear at the left of the EIT position in the case of scanning the probe field frequency detuning. Also, on the condition of scanning the probe field frequency detuning, the SWM BGS appears in two frequency ranges. Moreover, in the moving PBG structure, nonreciprocity of the SWM BGS can be obtained. Furthermore, the intensity, width, and location of the SWM BGS can be modulated through changing the frequency detunings and intensities of the probe field, the dressing field, and the coupling field; the sample length; and the frequency difference of coupling fields in EIG. Such a scheme could have potential applications in optical diodes, amplifiers, and quantum information processing.
Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical transistor is required. Here we compare the behavior of an optical transistor with the reflection from a photonic band gap structure in an electromagnetically induced transparency medium. A control signal is used to modulate the photonic band gap structure. Power variation of the control signal is used to provide an analogy between the reflection behavior caused by modulating the photonic band gap structure and the shifting of Q-point (Operation point) as well as amplification function of optical transistor. By means of the control signal, the switching function of optical transistor has also been realized. Such experimental schemes could have potential applications in making optical diode and optical transistor used in quantum information processing.
We first investigate the probe transmission signal (PTS) and the four wave mixing band gap signal (FWM BGS) modulated simultaneously by the relative phase and the nonlinear phase shift in the photonic band gap (PBG) structure. The switch between the absorption enhancement of PTS and the transmission enhancement of PTS with the help of changing the relative phase and the nonlinear phase shift is obtained in inverted Y-type four level atomic system experimentally and theoretically. The corresponding switch in PTS can be used to realize all optical switches. On other hand, the relative phase and the nonlinear phase shift also play the vital role to modulate the intensity of FWM BGS reflected from the PBG structure. And it can be potentially used to realize the optical amplifier.
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