Indoor photovoltaics (IPVs) are expected to power the Internet of Things ecosystem, which is attracting ever‐increasing attention as part of the rapidly developing distributed communications and electronics technology. The power conversion efficiency of IPVs strongly depends on the match between typical indoor light spectra and the band gap of the light absorbing layer. Therefore, band‐gap tunable materials, such as metal‐halide perovskites, are specifically promising candidates for approaching the indoor illumination efficiency limit of ∼56%. However, perovskite materials with ideal band gap for indoor application generally contain high bromine (Br) contents, causing inferior open‐circuit voltage (VOC). By fabricating a series of wide‐bandgap perovskites (Cs0.17FA0.83PbI3−xBrx, 0.6 ≤ x ≤ 1.6) with varying Br contents and related band gaps, it is found that, the high Br vacancy (VBr) defect density is a significant reason that leading to large VOC deficits apart from the well‐accepted halide segregation. The introduction of I‐rich alkali metal small‐molecule compounds is demonstrated to suppress the VBr and increase the VOC of perovskite IPVs up to 1.05 V under 1000 lux light‐emitting diode illumination, one of the highest VOC values reported so far. More importantly, the modules are sent for independent certification and have gained a record efficiency of 36.36%.
The wide-band-gap inorganic CsPbI2Br perovskite
material
provides a highly matched absorption range with the indoor light spectrum
and is expected to be used in the fabrication of highly efficient
indoor photovoltaic cells (IPVs) and self-powered low-power Internet
of Things (IoT) sensors. However, the defects that cause nonradiative
recombination and ion migration are assumed to form leakage loss channels,
resulting in a severe impact on the open-circuit voltage (V
OC) and the fill factor (FF) of IPVs. Herein,
we introduce poly(amidoamine) (PAMAM) dendrimers with multiple passivation
sites to fully repair the leakage channels in the devices, taking
into account the characteristics of IPVs that are extremely sensitive
to nonradiative recombination and shunt resistance. The as-optimized
IPVs demonstrate a promising PCE of 35.71% under a fluorescent light
source (1000 lux), with V
OC increased
from 0.99 to 1.06 V and FF improved from 75.21 to 84.39%. The present
work provides insight into the photovoltaic mechanism of perovskites
under full sun and indoor light, which provides guidance for perovskite
photovoltaic technology with industrialization prospects.
Printing is one industrially compatible scalable method for preparation perovskite thin film while suffering from low nucleation rate that causing inferior crystal quality. In this work, we applied slot-die coating...
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