Summary: Metamaterials with a refractive index of zero exhibit physical properties such as infinite phase velocity and wavelength. However, there is no way to implement these materials on a photonic chip, restricting the investigation and application of zero-index phenomena to simple shapes and small scales. We designed and fabricated an on-chip integrated metamaterial with a refractive index of zero in the optical regime. Light refracts perpendicular to the facets of a prism made of this metamaterial, directly demonstrating that the index of refraction is zero. The metamaterial consists of low-aspect-ratio silicon pillar arrays embedded in a polymer matrix and clad by gold films. This structure can be fabricated using standard planar processes over a large area in arbitrary shapes and can efficiently couple to photonic integrated circuits and other optical elements. This novel on-chip metamaterial platform opens the door to exploring the physics of zero-index and its applications in integrated optics.

Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This design supports zero-index modes with Dirac-cone dispersion. The metamaterial is entirely composed of silicon and offers compatibility through low-aspect-ratio structures that can be simply fabricated in a standard device layer. This platform enables mass adoption and exploration of zero-index-based photonic devices at low cost and high fidelity.

We propose an ultra-compact optical 90° hybrid with the smallest length of 107μm, consisting of a wedge-shaped 2 × 4 MMI coupler connected with a 2 × 2 MMI coupler using silicon nanowaveguide technology. Neither cascaded phase shifters nor waveguide crossings are attached to the proposed 90° hybrid in coherent receiving system. The proposed device is demonstrated on silicon-on-insulator (SOI) with 220nm thick top-silicon layer and 2μm thick buried oxide layer. A high performance of the proposed 90° hybrid is exhibited experimentally with a high extinction ratio larger than 20dB, an excess loss mostly less than 0.5dB, a common mode rejection ratio better than -20dB and phase deviation within the range of 5° over C-band spectral range.

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