Herein, the thermoelectric performance of TlGaSe2 ternary layered dichalcogenides is evaluated by applying ab initio density functional theory calculations combined with Boltzmann's transport equation. A novel approach to design the intrinsic structural defects via Se‐anion vacancies in unit cell has been developed. Two kinds of Se‐vacancy defects in host TlGaSe2 crystal lattice are engineered: the single vacancy defect induced intrinsically in the unit cell (1×1×1) and in the supercell lattice (1×1×4). It is found that the electrical transport properties and thermoelectric efficiency of this semiconductor could be significantly altered by introducing Se‐vacancy states into crystalline structure. In addition, simulation shows that inclusion of Se‐vacancy defects significantly improves the thermoelectric efficiency as well as the thermoelectric power factor and figure of merit (ZT) values of this compound. Additionally, the thermoelectric performance of TlGaSe2 is estimated by means of the electronic fitness function calculations in the valence and conduction edges. The results demonstrate that TlGaSe2 with introduced Se‐vacancies may be a perspective material for thermoelectric applications.
In this paper, the authors report first‐principles calculations of the Seebeck coefficient in TlInSe2. Experimental measurements demonstrate that TlInSe2 is characterized by giant values of the Seebeck coefficient at the temperature region of 320–430 K. To get insight on significant enhancement of Seebeck coefficient under temperature changing the density functional theory (DFT) and the Boltzmann transport equation are applied to calculate the semiclassical transport coefficients for TlInSe2 and its constructed models. The molecular dynamic simulations of 2 × 2 × 2 and 1 × 1 × 8 superlattices of TlInSe2, the TlInSe2_118a, TlInSe2_118b, TlInSe2_222a, TlInSe2_222b structures are performed to study their behavior in both “bulk” and “chain – like” modes. It is found that the distortions of InSe4 tetrahedra and displacements of Tl atom lead to formation of Tl–Se covalent bonds. The “bulk” TlInSe2_222b compound possesses the maximum value of Seebeck coefficient and (ZT)max in comparison with another studied compounds. The hybridization of Se and Tl orbitals near the top of valence band and hybridization of the Se, Tl, and In orbitals in conduction band may lead to increasing of Seebeck coefficient in TlInSe2 at 425 K.
Seebeck Coefficients
In article number http://doi.wiley.com/10.1002/pssa.201800835, Yurii M. Chumakov, MirHasan Yu. Seyidov, and co‐workers report first‐principles calculations of the Seebeck coefficient in TlInSe2. The hybridization of Se and Tl orbitals near the top of valence band as well as Se, Tl, and In orbitals in conduction band may lead to giant values of the Seebeck coefficient as it is reported in literature.
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