SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.

A machine learning approach to graph-theoretical cluster expansions of the energy of adsorbate layers The Journal of Chemical Physics 147, 054106 (2017); https://doi.org/10.1063/1.4985890 THE JOURNAL OF CHEMICAL PHYSICS 139, 224706 (2013) Parallel kinetic Monte Carlo simulation framework incorporating accurate models of adsorbate lateral interactions

A2BO4 spinels constitute one of the largest groups of oxides, with potential applications in many areas of technology, including (transparent) conducting layers in solar cells. However, the electrical properties of most spinel oxides remain unknown and poorly controlled. Indeed, a significant bottleneck hindering widespread use of spinels as advanced electronic materials is the lack of understanding of the key defects rendering them as p‐type or n‐type conductors. By applying first‐principles defect calculations to a large number of spinel oxides the major trends controlling their dopability are uncovered. Anti‐site defects are the main source of electrical conductivity in these compounds. The trends in anti‐sites transition levels are systemized, revealing fundamental “doping rules”, so as to guide practical doping of these oxides. Four distinct doping types (DTs) emerge from a high‐throughput screening of a large number of spinel oxides: i) donor above acceptor, both are in the gap, i.e., both are electrically active and compensated (DT‐1), ii) acceptor above donor, and only acceptor is in the gap, i.e., only acceptor is electrically active (DT‐2), iii) acceptor above donor, and only donor is in the gap, i.e., only donor is electrically active (DT3), and iv) acceptor above donor in the gap, i.e., both donor and acceptor are electrically active, but not compensated (DT‐4). Donors and acceptors in DT‐1 materials compensate each other to a varying degree, and external doping is limited due to Fermi level pinning. Acceptors in DT‐2 and donors in DT‐3 are uncompensated and may ionize and create holes or electrons, and external doping can further enhance their concentration. Donor and acceptor in DT‐4 materials do not compensate each other, and when the net concentration of carriers is small due to deep levels, it can be enhanced by external doping.

We present ab initio calculations of the magnetic susceptibility and of the 13 C chemical shift for carbon nanotubes, both isolated and in bundles. These calculations are performed using the recently proposed gauge-including projector augmented-wave approach for the calculation of magnetic response in periodic insulating systems. We have focused on the semiconducting zigzag nanotubes with diameters ranging from 0.6 to 1.6 nm. Both the susceptibility and the isotropic shift exhibit a dependence with the diameter (D) and the chirality of the tube (although this dependence is stronger for the susceptibility). The isotropic shift behaves asymptotically as α/D + 116.0, where α is a different constant for each family of nanotubes. For a tube diameter of around 1.2 nm, a value normally found in experimental samples, our results are in excellent agreement with experiments. Moreover, we calculated the chemical shift of a double-wall tube. We found a diamagnetic shift of the isotropic lines corresponding to the atoms of the inner tube due to the effect of the outer tube. This shift is in good agreement with recent experiments, and can be easily explained by demagnetizing currents circulating the outer tube.