The lateral motion of a magnetic skyrmion, arising because of the skyrmion Hall effect, imposes a number of restrictions on the use of this spin state in the racetrack memory. A skyrmionium is a more promising spin texture for memory applications, since it has zero total topological charge and propagates strictly along a nanotrack. Here, the stability of the skyrmionium, as well as the dependence of its size on the magnetic parameters, such as the Dzyaloshinskii–Moriya interaction and perpendicular magnetic anisotropy, are studied by means of micromagnetic simulations. We propose an advanced method for the skyrmionium nucleation due to a local enhancement of the spin Hall effect. The stability of the skyrmionium being in motion under the action of the spin polarized current is analyzed.
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin−orbit torque magnetic randomaccess memory (SOT-MRAM). Several structures have been developed; however, new structures with a simple stack structure and MRAM compatibility are urgently needed. Herein, a typical structure in a perpendicular spin-transfer torque MRAM, the Pt/ Co multilayer and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy, was observed to possess an intrinsic interlayer chiral interaction between neighboring magnetic layers, namely, the interlayer Dzyaloshinskii−Moriya interaction (DMI) effect. Furthermore, using a current parallel to the eigenvector of the interlayer DMI, we switched the perpendicular magnetization of both structures without a magnetic field, owing to the additional symmetry breaking introduced by the interlayer DMI. This SOT switching scheme realized in the Pt/Co multilayer and its synthetic antiferromagnet structure may open a new avenue toward practical perpendicular SOT-MRAM and other SOT devices.
An enhancement of the spin-orbit effects arising on an interface between a ferromagnet (FM) and a heavy metal (HM) is possible through the strong breaking of the structural inversion symmetry in the layered films. Here, we show that an introduction of an ultrathin W interlayer between Co and Ru in Ru/Co/Ru films enables to preserve perpendicular magnetic anisotropy (PMA) and simultaneously induce a large interfacial Dzyaloshinskii-Moriya interaction (iDMI). The study of the spin-wave propagation in the Damon-Eshbach geometry by Brillouin light scattering spectroscopy reveals the drastic increase in the iDMI value with the increase in W thickness (tW). The maximum iDMI of −3.1 erg/cm2 is observed for tW = 0.24 nm, which is 10 times larger than for the quasi-symmetrical Ru/Co/Ru films. We demonstrate the evidence of the spontaneous field-driven nucleation of isolated skyrmions supported by micromagnetic simulations. Magnetic force microscopy measurements reveal the existence of sub-100-nm skyrmions in the zero magnetic field. The ability to simultaneously control the strength of PMA and iDMI in quasi-symmetrical HM/FM/HM trilayer systems through the interface engineered inversion asymmetry at the nanoscale excites new fundamental and practical interest in ultrathin ferromagnets, which are a potential host for stable magnetic skyrmions.
Gradual magnetization switching driven by spin–orbit torque (SOT) is preferred for neuromorphic computing in a spintronic manner. Here we have applied focused ion beam to selectively illuminate patterned regions in a Pt/Co/MgO strip with perpendicular magnetic anisotropy, soften the illuminated areas, and realize the gradual switching by a SOT-driven nucleation process. It is found that a large in-plane field is helpful to reduce the nucleation barrier, increase the number of nucleated domains and intermediate states during the switching progress, and finally flatten the switching curve. We proposed a phenomenological model for descripting the current dependence of magnetization and the dependence of the number of nucleation domains on the applied current and magnetic field. This study may promote the birth of SOT devices applicable in neuromorphic computing applications.
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