Cu2ZnSnS4 (CZTS) thin films were prepared on soda lime glass by dip coating with sulfurized Cu, Zn, Sn precursors, N2 gas jet flattening, and annealing under an Ar+H2S atmosphere, which is a simple and inexpensive process for large-area thin-film preparation, and the influence of the Cu/(Zn+Sn) ratio on the properties of the film were investigated. Copper (II) acetate monohydrate, zinc (II) acetate dihydrate, tin (II) chloride dihydrate and thiourea dissolved in an ethanol solution were used for the preparation of the sulfurized Cu, Zn and Sn precursors as a low-cost raw materials for chemical bath deposition, and dip coating of the precursors and annealing under an Ar+H2S atmosphere were applied to prepare kesterite CZTS films on substrates. Sulfurization under an Ar+H2S atmosphere enhanced CZTS formation with no zinc oxide and adhesion on the soda lime glass. As the Cu/(Zn+Sn) ratio was increased in the film,the grain size and the film density increased whereas the band gap energy and the resistivity decreased. All films exhibited a p-type semi-conductivity with a high carrier concentration.