Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these twodimensional materials aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we demonstrate that biaxial strain, both tensile and compressive, can be applied and released in a timescale of a few seconds in a reproducible way on transition metal dichalcogenides monolayers deposited on polymeric substrates. We can control the amount of biaxial strain applied by letting the substrate expand or compress. To do this we change the substrate temperature and choose materials with a large thermal expansion coefficient. After the investigation of the substrate-dependent strain transfer, we performed micro-differential spectroscopy of four transition metal dichalcogenides monolayers (MoS 2 , MoSe 2 , WS 2 , WSe 2 ) under the application of biaxial strain and measured their optical properties. For tensile strain we observe a redshift of the bandgap that reaches a value as large as 95 meV/% in the case of single-layer WS 2 deposited on polypropylene. The observed bandgap shifts as a function of substrate extension/compression follow the order MoSe 2 < MoS 2 < WSe 2 < WS 2 . Theoretical calculations of these four materials under biaxial strain predict the same trend for the material-dependent rates of the shift and reproduce well the features observed in the measured reflectance spectra.

Semiconducting transition metal dichalcogenide (TMDC) monolayers have exceptional physical properties. They show bright photoluminescence due to their unique band structure and absorb more than 10% of the light at their excitonic resonances despite their atomic thickness. At room temperature, the width of the exciton transitions is governed by the exciton-phonon interaction leading to strongly asymmetric line shapes. TMDC monolayers are also extremely flexible, sustaining mechanical strain of about 10% without breaking. The excitonic properties strongly depend on strain. For example, exciton energies of TMDC monolayers significantly redshift under uniaxial tensile strain. Here, we demonstrate that the width and the asymmetric line shape of excitonic resonances in TMDC monolayers can be controlled with applied strain. We measure photoluminescence and absorption spectra of the A exciton in monolayer MoSe, WSe, WS, and MoS under uniaxial tensile strain. We find that the A exciton substantially narrows and becomes more symmetric for the selenium-based monolayer materials, while no change is observed for atomically thin WS. For MoS monolayers, the line width increases. These effects are due to a modified exciton-phonon coupling at increasing strain levels because of changes in the electronic band structure of the respective monolayer materials. This interpretation based on steady-state experiments is corroborated by time-resolved photoluminescence measurements. Our results demonstrate that moderate strain values on the order of only 1% are already sufficient to globally tune the exciton-phonon interaction in TMDC monolayers and hold the promise for controlling the coupling on the nanoscale.

The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2, and WSe2, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2, and WSe2.

Almost all experiments and future applications of transition metal dichalcogenide monolayers rely on a substrate for mechanical stability, which can significantly modify the optical spectra of the monolayer. Doping from the substrate might lead to the domination of the spectra by trions. Here we show by ab initio many-body theory that the negative trion (A−) splits into three excitations, with both inter- and intra-valley character, while the positive counterpart (A+) consists of only one inter-valley excitation. Furthermore, the substrate enhances the screening, which renormalizes both band gap and exciton as well as the trion-binding energies. We verify that these two effects do not perfectly cancel each other, but lead to red-shifts of the excitation energies for three different substrates ranging from a wide-bandgap semiconductor up to a metal. Our results explain recently found experimental splittings of the lowest trion line as well as excitation red-shifts on substrates.

Due to their unique band structure, single layers of transition metal dichalcogenides are promising for new atomic-scale physics and devices. It has been shown that the band structure and the excitonic transitions can be tuned by straining the material. Recently, the discovery of single-photon emission from localized excitons has put monolayer WSe 2 in the spotlight. The localized light emitters might be related to local strain potentials in the monolayer. Here, we measure strain-dependent energy shifts for the A, B, C, and D excitons for uniaxial tensile strain up to 1.4% in monolayer WSe 2 by performing absorption measurements. A gauge factor of -54 , meV % -50 , meV % +17 , meV % and -22 meV % is derived for the A, B, C, and D exciton, respectively. These values are in good agreement with ab initio GW-BSE calculations. Furthermore, we examine the spatial strain distribution in the WSe 2 monolayer at different applied strain levels. We find that the size of the monolayer is crucial for an efficient transfer of strain from the substrate to the monolayer. RECEIVED

Atomically thin materials such as graphene or MoS are of high in-plane symmetry. Crystals with reduced symmetry hold the promise for novel optoelectronic devices based on their anisotropy in current flow or light polarization. Here, we present polarization-resolved optical transmission and photoluminescence spectroscopy of excitons in 1T'-ReSe. On reducing the crystal thickness from bulk to a monolayer, we observe a strong blue shift of the optical band gap from 1.37 to 1.50 eV. The excitons are strongly polarized with dipole vectors along different crystal directions, which persist from bulk down to monolayer thickness. The experimental results are well reproduced by ab initio calculations based on the GW-BSE approach within LDA+GdW approximation. The excitons have high binding energies of 860 meV for the monolayer and 120 meV for bulk. They are strongly confined within a single layer even for the bulk crystal. In addition, we find in our calculations a direct band gap in 1T'-ReSe regardless of crystal thickness, indicating weak interlayer coupling effects on the band gap characteristics. Our results pave the way for polarization-sensitive applications, such as optical logic circuits operating in the infrared spectral region.

Bound electron–hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose–Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe2, we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures.

Recently, spatially indirect ("interlayer") excitons have been discovered in bulk 2H-MoTe2. They are theoretically predicted to exist in other Mo-based transition metal dichalcogenides (TMDCs) and are expected to be present in W-based TMDCs as well. We investigate interlayer excitons (XIL) in bulk 2H-MoSe2 and 2H-WSe2 using valley-resolved magneto-reflectance spectroscopy under high magnetic fields of up to 29 T combined with ab initio GW-BSE calculations. In the experiments, we observe interlayer excitons in MoSe2, while their signature is surprisingly absent in WSe2. In the calculations, we find that interlayer excitons exist in both Mo- and W-based TMDCs. However, their energetic positions and their oscillator strengths are remarkably different. In Mo-based compounds, the interlayer exciton resonance XIL is clearly separated from the intralayer exciton X1sA and has a high amplitude. In contrast, in W-based compounds, XIL is close in energy to the intralayer A exciton X1sA and possesses a small oscillator strength, which explains its absence in the experimental data of WSe2. Our combined experimental and theoretical observations demonstrate that interlayer excitons can gain substantial oscillator strength by mixing with intralayer states and hence pave the way for exploring interlayer exciton physics in Mo-based bulk transition metal dichalcogenides.