Current-driven vibrational nonequilibrium induces vibrational sidebands in single-molecule transistors which arise from tunneling processes accompanied by absorption of vibrational quanta. Unlike conventional sidebands, these absorption sidebands occur in a regime where the current is nominally Coulomb blockaded. Here, we develop a detailed and analytical theory of absorption sidebands, including current-voltage characteristics as well as shot noise. We discuss the relation of our predictions to recent experiments.
Semiclassical spin-coherent kinetic equations can be derived from quantum theory with many different approaches (Liouville equation based approaches, nonequilibrium Green's functions techniques, etc.). The collision integrals turn out to be formally different, but coincide in textbook examples as well as for systems where the spin-orbit coupling is only a small part of the kinetic energy like in related studies on the spin Hall effect. In Dirac cone physics (graphene, surface states of topological insulators like Bi1−xSbx, Bi2Te3 etc.), where this coupling constitutes the entire kinetic energy, the difference manifests itself in the precise value of the electron-hole coherence originated quantum correction to the Drude conductivity σ0 ∼ e 2 h kF. The leading correction is derived analytically for single and multilayer graphene with general scalar impurities. The often neglected principal value terms in the collision integral are important. Neglecting them yields a leading correction of order ( kF) −1 , whereas including them can give a correction of order ( kF) 0 . The latter opens up a counterintuitive scenario with finite electron-hole coherent effects at Fermi energies arbitrarily far above the neutrality point regime, for example in the form of a shift δσ ∼ e 2 h that only depends on the dielectric constant. This residual conductivity, possibly related to the one observed in recent experiments, depends crucially on the approach and could offer a setting for experimentally singling out one of the candidates. Concerning the different formalisms we notice that the discrepancy between a density matrix approach and a Green's function approach is removed if the Generalized Kadanoff-Baym Ansatz in the latter is replaced by an anti-ordered version. This issue of Ansatz may also be important for Boltzmann type treatments of graphene beyond linear response.
We study the lifetime of the persistent spin helix in semiconductor quantum
wells with equal Rashba- and linear Dresselhaus spin-orbit interactions. In
order to address the temperature dependence of the relevant spin relaxation
mechanisms we derive and solve semiclassical spin diffusion equations taking
into account spin-dependent impurity scattering, cubic Dresselhaus spin-orbit
interactions and the effect of electron-electron interactions. For the
experimentally relevant regime we find that the lifetime of the persistent spin
helix is mainly determined by the interplay of cubic Dresselhaus spin-orbit
interaction and electron-electron interactions. We propose that even longer
lifetimes can be achieved by generating a spatially damped spin profile instead
of the persistent spin helix state.Comment: 12 pages, 2 figure
We derive a spin diffusion equation for a spin-orbit coupled two-dimensional electron gas including the Hartree-Fock field resulting from 1st order electron-electron interactions. We find that the lifetime of the persistent spin helix, which emerges for equal linear Rashba-and Dresselhaus spin-orbit interactions, can be enhanced considerably for large initial spin polarizations due to the Hartree-Fock field. The reason is a reduction of the symmetry-breaking cubic Dresselhaus scattering rate by the Hartree-Fock field. Also higher harmonics are generated and the polarization of the persistent spin helix rotates out of the (Sy,Sz)-plane acquiring a finite Sx-component. This effect becomes more pronounced, when the cubic Dresselhaus spin-orbit interaction is large.
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