In this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution, and the etch product desorption kinetics have on the resultant nanoscale etching profile. Unlike analogous electron beam induced deposition models, it is shown that one must consider the diffusion, desorption, and possible re-dissociation of the resultant etch product to understand the observed etching profiles. To confirm the explanation of the etch results, a defocus experiment was performed showing transitions from the electron flux limited to the mass transport limited to the etch product dissociation limited regimes.
Electron beam induced etching (EBIE) is an important technique for repairing nanoscale defects on extreme ultraviolet (EUV) lithography masks as it provides excellent spatial resolution and etch selectivity while minimizing collateral damage to the mask. While EBIE itself is a complex process, a current problem with EBIE of the TaN EUV mask absorber layer using XeF2 is the spontaneous etching of repaired features during subsequent edits of the mask. This work explores three passivation techniques for controlling the spontaneous etching after an EBIE repair is made. An oxygen plasma was used to attempt to oxidize the TaN sidewalls, but it was not successful at stopping the spontaneous etching. An active electron beam induced passivation using water was successful at stopping the spontaneous etching. Also, simple adsorption of water molecules on the TaN sidewalls was successful at inhibiting spontaneous etching. The successful passivation strategies are affected by subsequent scanning electron beam imaging. It was determined that the electron beam activated passivation can be damaged by electron beam imaging in the presence of residual XeF2 on the surface. Also, the adsorbed water passivation strategy is susceptible to electron induced desorption of the water.
High resolution and isolated scanning probe microscopy (SPM) is in demand for continued development of energy storage and conversion systems involving chemical reactions at the nanoscale as well as an improved understanding of biological systems. Carbon nanotubes (CNTs) have large aspect ratios and, if leveraged properly, can be used to develop high resolution SPM probes. Isolation of SPM probes can be achieved by deposited a dielectric film and selectively etching at the apex of the probe. In this paper the fabrication of a high resolution and isolated SPM tip is demonstrated using electron beam induced etching of a dielectric film deposited onto an SPM tip with an attached CNT at the apex.
Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene-boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. Conductive AFM measurements showed that the presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.
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