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A novel hole-transporting poly[di(1-naphthyl)-4-tolylamine:DNTA] (PDNTA) has been developed. PDNTA was easily prepared by oxidative coupling polymerization of DNTA using FeCl3 as an oxidant. This polymerization produced regiocontrolled PDNTA with high molecular weights. PDNTA exhibited strong UV-vis absorption bands at 267 and 370 nm in chloroform solution. Their photoluminescence spectra showed a maximum peak band around 445-448 nm in the blue region. The organic light-emitting device (OLED) prepared by spin-casting PDNTA solution onto ITO-coated glass substrate in conjunction with Alq and LiF/Al, as an electron-transporting light-emissive layer and a metal cathode, respectively, showed a maximum luminescence of 25 000 cd/m 2 at 12.5 V.

Calix[4]resorcinarene (2,8,14,20-tetramethylcalix[4]arene-4,6,10,12,16,18,22,24-octol, abbrev. to C4-RA) derivative (4) having p-hydroxybenzyl groups on its exterior was prepared by the condensation of C4-RA and p-(allyloxy)benzyl bromide, followed by the cleavage of allyl groups with palladium catalyst and ammonium formate. Compound 4 having high transparency to UV-light above 300 nm was considered for a new resist matrix. A three-component photoresist consisting of 4, 2,6-bis(hydroxymethyl)-4-methylphenol (BHMP), and diphenyliodonium 9,10-dimethoxyanthracene-2-sulfonate (DIAS) showed a sensitivity of 19 mJ cm−2 (D1/2) and a contrast of 3.0 (γ1/2) when it was exposed to 365 nm light and post-exposure baked (PEB) at 110 °C for 5 min, followed by developing with a 0.2 wt% aqueous tetramethylammonium hydroxide (TMAH) solution. A fine negative image featuring 1 μm of minimum line and space patterns was observed on film of the photoresist exposed to 40 mJ cm−2 of UV-light at 365 nm with a scanning electron microscope.

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