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The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1 Ba 2 Cu 3 O 7−δ coated conductors has been studied with a view to improving the I c -B-θ properties. BaMO x (M = metal) was introduced into Gd 1 Ba 2 Cu 3 O 7−δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7−δ coated conductors showed remarkably good I c -B-θ characteristics, even at high temperature. A short sample with 1 µm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30 A/cm-w@77 K (A/cm-w@77 K to be read as 'amps per centimeter width, at 77 K') at 3 T. The minimum J c value of ∼0.3 MA cm −2 @77 K at 3 T was independent of the film thickness up to 2.9 µm. The 2.9 µm thick film showed a minimum I c value of 84.

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