SiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.