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Cu2ZnSnS4 (CZTS) thin film solar cells have been fabricated with the all semiconductor layers prepared under non‐vacuum conditions. For the solar cell structure of Al/ZnO:Al/CdS/CZTS/Mo/Soda Lime Glass (SLG) substrate, ZnO:Al window, CdS buffer and CZTS absorber layers were deposited by sol‐gel, chemical bath deposition (CBD) and sol‐gel sulfurizing methods, respectively. Since the CdS buffer layer plays an important role in the final photovoltaic properties of thin film solar cells, an optimum condition of the CdS deposition was first determined. As a result of the investigations, the best solar cell showed an open circuit voltage of 554 mV, a short current density of 6.70 mA/cm2, a fill factor of 43.4% and a conversion efficiency of 1.61%. This is the highest conversion efficiency to date of the CZTS solar cell prepared under non‐vacuum conditions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Cu 2 ZnSnS 4 (CZTS) thin films were prepared by a sol-gel sulfurization method. One sample (CZTS1) was stoichiometric (Cu

Cu 2 ZnSnS 4 (CZTS) thin films were prepared by sulfurizing pre-annealed oxyhydrate precursors deposited by the sol-gel method. The precursors were obtained by coating solutions containing copper(II) acetate monohydrate, zinc(II) acetate dihydrate, tin(II) chloride dihydrate, 2-methoxyethanol, and monoethanolamine on a soda lime glass (SLG). By pre-annealing the precursors in air at 560 C, chemical composition of films was almost stoichiometric, transmittance of IR region was increased and number of void was decreased while chemical composition of CZTS films deviated considerably from stoichiometry when the precursors were annealed N 2 þ H 2 (5%) atmosphere at 460 and 560 C.