Using a high-contrast (10(10):1) and high-intensity (10(21) W/cm(2)) laser pulse with the duration of 40 fs from an optical parametric chirped-pulse amplification/Ti:sapphire laser, a 40 MeV proton bunch is obtained, which is a record for laser pulse with energy less than 10 J. The efficiency for generation of protons with kinetic energy above 15 MeV is 0.1%.
J-KAREN-P is a high-power laser facility aiming at the highest beam quality and irradiance for performing state-of-the art experiments at the frontier of modern science. Here we approached the physical limits of the beam quality: diffraction limit of the focal spot and bandwidth limit of the pulse shape, removing the chromatic aberration, angular chirp, wavefront and spectral phase distortions. We performed accurate measurements of the spot and peak fluence after an f/1.3 off-axis parabolic mirror under the full amplification at the power of 0.3 PW attenuated with ten high-quality wedges, resulting in the irradiance of ~10 W/cm and the Strehl ratio of ~0.5.
A series of FT-IR spectrometric studies has been performed to understand the latent track structure in poly(allyl diglycol carbonate), PADC, which were exposed to proton beams with energies of 20, 30 and 70 MeV. These energies are too high to register etchable tracks in PADC. Chemical damage parameters, such as damage density, effective track core radius and radiation chemical yields, for losses of ether bond, carbonate ester bond and CH groups in PADC are evaluated as a function of the stopping power, which were compared to the previous results for 5.7 MeV proton and heavy ions, between He and Xe.Graphs of the chemical damage parameters are given at the wide stopping powers ranging from 1 to 12,000 keV/µm. The decreasing behaviors of the ether and carbonate ester bonds are on the almost identical trends with those of the heavy ions. On the contrary to this, the reducing behavior of CH groups is similar to that of the gamma rays. Different dependence of the chemical damage parameters for the loss of CH groups is found on the stopping powers between the both sides of the detection threshold as an etched track detector.
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