The modification of a fluorinated self-assembled monolayer (FSAM) on an indium–tin-oxide (ITO) anode enhances hole-injection from ITO and prolongs the lifetime of organic light-emitting diodes (OLEDs). The effect of inhomogeneous modification by shortening the fabrication time can be expressed as the superposition of unmodified and FSAM-modified surface conditions. The FSAM coverage is estimated to be 20–40% by contact angle, work function, atomic force microscopy phase image and current characteristics measurements. The device performance of OLEDs with inhomogeneous FSAMs exhibited intermediate behavior, which suggests that the anode interface condition plays an important role in the conduction and degradation mechanisms of OLEDs.
The electronic structure and chemical properties of the interface between indium tin oxide (ITO) modified by a fluorinated self-assembled monolayer (F-SAM) and a N,N '-bis(1-naphthyl)-N,N '-diphenyl-1,1'-diphenyl-1,4'-diamine (α-NPD) layer were investigated in order to clarify the effects of the F-SAM modification of ITO anodes on the driving voltage and lifetime of organic light-emitting diodes (OLEDs). Ultraviolet and X-ray photoelectron spectroscopy revealed that the F-SAM modification of ITO led to a shallower highest occupied molecular orbital level in the α-NPD layer near the interface than in conventionally treated ITO, a chemical reaction between F-SAM and α-NPD, and the migration of adsorbed fluorine into the α-NPD layer. These results indicate that high conductance, the suppression of crystallization, and the inhibition of oxidation in the hole-transporting layer along with a small hole-injection barrier height at the anode/HTL interface contribute to the excellent properties of OLEDs having ITO anodes modified by F-SAM.
We investigate the effect of the interface phenomena of a self-assembled monolayer (SAM) molecules on hole injection. A SAM represents an easy and accurate approach to the modification of surface properties. The dipole moment of a fluorinated SAM (FSAM) improves hole injection from Indium Tin Oxide (ITO). We prepare several kinds of FSAM with different number of fluorine atoms FnSAM. As the number of fluorine atom increases, the dipole moment also increases. Increasing the chain length increases the van der Waals interaction between alkyl chains. We examine the interface characteristics of SAM molecules on the hole injection.
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