We describe the preparation of (Bi, La)4Ti3O12 thin films on various substrates such as MgO, glass Pt(100)/ MgO(100) and Pt(111)/glass by rf magnetron sputtering. Perovskite-type thin films were prepared on these substrates. The chemical composition of the thin films was found to be (Bi3.56La0.57)Ti3O12 by ICP analysis. Thin film on Pt(100)/MgO(100) substrate showed fairly good fatigue properties: initial state, P r=7.5 µ C/cm2, E c=174 kV/cm and after 109 pulses, P r=5.7 µ C/cm2, E c=117 kV/cm.
In order to miniaturize mobile phones, PDA's, and other handheld electronic devices, the use of wafer level packaging such as MCP and SIP with various functionalities has increased significantly.Polyimide, BCB, and epoxy resin systems are widely used as dielectric redistribution materials. Sputtering has been the metallization technology of choice for UBM and seed layers. However, the high cost and poor adhesive reliability are issues with sputtering as a metallization technology.As an alternative to sputtering technology, a photoimageable auto-catalytic resin (PAR) has been designed that enables the electroless metallization of a wide variety of substrates, including WL-CSP dielectrics such as polyimide film, glass, and ceramics. PAR also enables interconnects with excellent electrical and adhesive reliability. This paper will focus on the properties and reliability of PAR materials as a new metallization technology. IntroductionSputtering processes have been widely used for UBM or seed layer production in semiconductor environments. Traditional DC sputtering systems have been switched to RF or magnetron sputtering systems in order to meet the requirements of deposition speed, high plasma density, and low discharge voltages. In the semiconductor and LCD industries, the expansion of wafer and glass substrate sizes has decreased the utilization efficiency of the target materials and increased the processing cost for sputtering.On the other hand, wet processes such as electroplating and electroless plating technologies, are familiar to WL-CSP production in copper damascene applications, solder bumping, and nickel/gold plating. Traditional electroless copper or nickel processes can be very difficult to install in a semiconductor environment as they have very long and complicated process flow. Furthermore, periodic analysis and replenishment are necessary to maintain each bath. (Figure 1)
The JapaneseSociety forSlavicand East European StudiesMasanobu. NOMURA agricultural production. It is the dominant crop and its cultivation acceunts for about half of all arable land. However, despite this specialization in cotton production, Turkrnenistan has yet to develop an extensive processing industry for the raw cotton. Only 30% is turned into cotton yarn by Turkmen factories. Furthermore, because of cotton monoculture, Turkmenistan is not self-sufficient in food. Therefore, such staples as wheat, dairy goods and sugar all must be imported from Russia, Kazakhstan, or Ukraine. In 199 1 Turkmenistan imported 65% of its grain, 45% of its milk and dairy goods, 70% of its potatoes, and its entire year's supply of sugari. For this reason, upon declaring independence, the dual goals of maximizing the benefits of the cotton industry, while at the same time attaining selfisuf{iiciency in food were declared important tasks2. Since that point grain production has gradually increased from 449 thousand tons in 1990, to 900 thousand tons in 1993 while the eventual aim is to produce 1 ,500 thousand tons3, This paper's tasks are three-fold: first we will examine the tremendous growth ofirrigated agriculture in Turkmenistan following construction of the Kara Kum Canal as well as its consequences,
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