A Java program in a GUI environment has been developed for the numerical solution of basic partial differential equations and applied to Au diffusion in Si affected by vacancies and self-interstitials. Text fields of selected parameters for the calculation are set on the display, and the calculation starts by checking the start button after putting values on the text fields. The calculated results are plotted immediately after the finish of the calculation as the concentration profiles of substitutional Au, interstitial Au, vacancies and self-interstitials, and their diffusion can be presented immediately, resulting in the identification of the diffusion mechanism. By changing the values of the text fields, new results can be represented immediately. The diffusion of Au in Si can be simulated correctly and easily by this program. Results from the program for one set of conditions are shown, including images produced on the display
Gold was in-diffused at 1150° C into silicon containing extended defects (dislocations or stacking faults) and into defect-free silicon single crystals, and the diffusion-limiting process for the gold in-diffusion was investigated. Gold diffusion in the crystals without defects and that very near the specimen surface in crystals with defects are limited by the diffusion of self-interstitials to the surface. Diffusion in the crystals with defects is limited by the diffusion of interstitial gold atoms from the surface. In crystals with an extremely low concentration of extended defects, the diffusion is limited by the diffusion of self-interstitials to the defects.
Java programs in a GUI environment have been developed for an image learning of charge motions in electric and magnetic fields. Text fields of selected parameters for the numerical calculation of the differential equations of the charge motion, such as the electric field and magnetic field, are set on the display, and the calculation by Runge-Kutta method is begun by clicking the start button after inputting values into the text fields. The calculated results are plotted immediately after the completion of the calculation as a figure on the display, e.g., a charge locus for the simulation of charge motion. By changing the values in the text fields, new results can be represented immediately, and the charge motion under a new electric and magnetic fields can be easily simulated. These Java programs are useful in education applications for rapidly and accurately image learning for the phenomena expressed by ordinary differential equations.
Gold was diffused into several silicon single crystals at 1150°C and hexagonal stacking faults were induced in some crystals by the gold diffusion. The relationship of the stacking fault formation to the gold diffusion was investigated. The stacking faults were formed in a region greater than about 100 µm from the specimen surface and increased in the inner part to a constant value greater than 300 µm. The stacking fault size and number increased with the substitutional gold concentration but only their number decreased with the decrease of the gold concentration. The number of point defects contributing to the growth of stacking faults was nearly equal to that of substitutional gold atoms diffused into silicon, and the stacking fault contained one atomic layer of point defects. The reaction between the nucleus of stacking faults and the point defects was not uniformly distributed, but was instead localized.
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