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We propose a novel excimer-laser crystallization method that uses a phase-shift mask for large-grain growth of Si thin films on the glassy substrate. Due to interference effects of the laser light, the phase difference of light at the mask results in spatial modulation of light intensity at the sample surface, which triggers the lateral grain growth. Grains as large as 7 µm could be grown by a single-shot irradiation.

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Bis-π-cyclopentadienyl nickel has been proposed as a source material for metalorganic chemical vapor deposition of nickel oxide films. The transparent film deposited at 310°C was of a NaCl-type crystal structure of NiO. The refractive index and optical bandgap were approximately 2.1 and 3.7 eV, respectively.