The impact of threading dislocation density on the leakage current of reverse current-voltage (I–V) characteristics in Schottky barrier diodes (SBDs), junction barrier Schottky diodes, and p-n junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. Consequently, the correlation in SBDs is strong but weak in PNDs. Nano-scale inverted cone pits were observed at the Schottky junction interface, and it was found that leakage current increases in these diodes due to the concentration of electric fields at the peaks of the pits. The threading dislocations were found to be in the same location as the current leakage points in the SBDs but not in the PNDs.
Patients with localized WG may have a better outcome than those with systemic WG, but complications due to the disease or medication must be actively managed. Reconstructive surgery for patients with WG is safe and effective during the remission stage.
To clarify the relationship between the dispersed reverse characteristics of 4H-SiC junction barrier Schottky (JBS) diodes and defects, we investigated the sensitivity of the reverse characteristics to surface and crystalline defects in 4H-SiC epitaxial layers. Strong correlations were obtained between the reverse characteristics of 4H-SiC JBS diodes and surface defects. Micropipes or particles reduced blocking voltage and carrot defects increased leakage current. Furthermore, the leakage current of 4H-SiC JBS diodes depends on the etch pit density of threading dislocations (TDs). Etch pits formed from TDs increased leakage current by about 10-9 A in samples without surface defects. In addition, hexagonal etch pits formed from unusual crystalline defects were observed; they also increased leakage current.
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