Very high-mobility organic transistors are fabricated with purified rubrene single crystals and high-density organosilane self-assembled monolayers. The interface with minimized surface levels allows carriers to distribute deep into the crystals by more than a few molecular layers under weak gate electric fields, so that the inner channel plays a significant part in the transfer performance. With the in-crystal carriers less affected by scattering mechanisms at the interface, the maximum transistor mobility reaches 18cm2∕Vs and the contact-free intrinsic mobility turned out to be 40cm2∕Vs as the result of four-terminal measurement. These are the highest values ever reported for organic transistors.

Background-Pluripotent

To investigate hemodynamic and hormonal effects of ghrelin, a novel growth hormone (GH)-releasing peptide, we gave six healthy men an intravenous bolus of human ghrelin (10 microg/kg) or placebo and vice versa 1-2 wk apart in a randomized fashion. Ghrelin elicited a marked increase in circulating GH (15-fold). The elevation of GH lasted longer than 60 min after the bolus injection. Injection of ghrelin significantly decreased mean arterial pressure (-12 mmHg, P < 0.05) without a significant change in heart rate (-4 beats/min, P = 0.39). Ghrelin significantly increased cardiac index (+16%, P < 0.05) and stroke volume index (+22%, P < 0.05). We also examined ghrelin receptor [GH secretagogues receptor (GHS-R)] gene expression in the aortas, the left ventricles, and the left atria of rats by RT-PCR. GHS-R mRNA was detectable in the rat aortas, left ventricles, and left atria, suggesting that ghrelin may cause cardiovascular effects through GH-independent mechanisms. In summary, human ghrelin elicited a potent, long-lasting GH release and had beneficial hemodynamic effects via reducing cardiac afterload and increasing cardiac output without an increase in heart rate.

No abstract

Mesenchymal stem cells (MSCs) are pluripotent cells that differentiate into a variety of cells, including cardiomyocytes and endothelial cells. However, little information is available regarding the therapeutic potency of systemically delivered MSCs for myocardial infarction. Accordingly, we investigated whether intravenously transplanted MSCs induce angiogenesis and myogenesis and improve cardiac function in rats with acute myocardial infarction. MSCs were isolated from bone marrow aspirates of isogenic adult rats and expanded ex vivo. At 3 h after coronary ligation, 5 x 10(6) MSCs (MSC group, n=12) or vehicle (control group, n=12) was intravenously administered to Lewis rats. Transplanted MSCs were preferentially attracted to the infarcted, but not the noninfarcted, myocardium. The engrafted MSCs were positive for cardiac markers: desmin, cardiac troponin T, and connexin43. On the other hand, some of the transplanted MSCs were positive for von Willebrand factor and formed vascular structures. Capillary density was markedly increased after MSC transplantation. Cardiac infarct size was significantly smaller in the MSC than in the control group (24 +/- 2 vs. 33 +/- 2%, P <0.05). MSC transplantation decreased left ventricular end-diastolic pressure and increased left ventricular maximum dP/dt (both P <0.05 vs. control). These results suggest that intravenous administration of MSCs improves cardiac function after acute myocardial infarction through enhancement of angiogenesis and myogenesis in the ischemic myocardium.

Development of high-performance printed semiconductor devices is highly desired with the expectation for the nextgeneration technologies of "printable electronics" providing simply fabricated, fl exible, large-area, low-cost, and environmentally friendly electronic products such as paper-like fl exible displays. Patterned arrays of printed organic fi eld-effect transistors (OFETs) based on chemically stable solutionprocessed organic semiconductors are regarded as key devices that operate as fundamental switching components in, for example, pixel-controlling active-matrix elements. However, performance of conventional solution-coated noncrystal organic thin-fi lm transistors has yet to be improved for practical use in general electronic circuitry. Here, newly developed arrays of patterned crystalline OFETs of air-stable compound 2,9-didecyl-dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene (C 10 -DNTT) formed from hot solution are presented. A method of oriented growth is introduced to provide the singlecrystalline fi lms of C 10 -DNTT that regulates the crystallizing direction and positions in a single process. The benchmark value, 10 cm 2 V − 1 s − 1 , of the charge mobility is achieved for the present OFETs, far exceeding the performance of former devices and opening a practical way to realize printed and fl exible electronics with suffi cient switching speed. The result is attributed to almost perfect molecular periodicity in the crystal fi lms, which allows effective intermolecular charge transport of the electrons.In the process of forming organic semiconductor fi lms from solution by naturally evaporating the solvent near room temperature, constituent molecules that are independently dispersed in the solvent, are expected to self-organize into a highly ordered assembly with the amazing speed of more than 10 10 molecules per second. [ 1 ] Since the speed of the fi lm growth is directly translated to high-throughput production, solution techniques such as spin-coating and drop-casting are very attractive for the industry. [ 2 ] Regarding the performance of the solution-processed organic fi eld-effect transistors (OFETs), their switching speed is directly determined by charge carrier mobility in the organic semiconductors, which relies on microscopic electronic properties of molecule-to-molecule charge-transfer probability and the extent of molecular ordering. Therefore, it has been intensively challenging to create high-mobility active semiconductor layers using simple solution techniques. In addition, simple methods of forming their patterned arrays during the fi lm growth have been regarded as essential technology for accelerated production of matrix devices. Here, the extent of the molecular order signifi cantly infl uences device performance through the charge carrier mobility in the semiconductor fi lms. In order to realize much higher performance than achieved in present devices, synthesis of functional π -conjugated molecules with superior selfassembling properties, in addition to their high-charge-trans...

Background-Ghrelin is a novel growth hormone (GH)-releasing peptide, isolated from the stomach, that may also cause a positive energy balance by stimulating food intake and inducing adiposity. We sought to investigate the pathophysiology of ghrelin in the cachexia associated with chronic heart failure (CHF). Methods and Results-Plasma ghrelin was measured in 74 patients with CHF and 12 control subjects, together with potentially important anabolic and catabolic factors, such as GH and tumor necrosis factor (TNF-␣). Patients with CHF were divided into two groups, those with cachexia (nϭ28) and those without cachexia (nϭ46). Plasma ghrelin did not significantly differ between all CHF patients and controls (181Ϯ10 versus 140Ϯ14 fmol/mL, PϭNS). However, plasma ghrelin was significantly higher in CHF patients with cachexia than in those without cachexia (237Ϯ18 versus 147Ϯ10 fmol/mL, PϽ0.001). Circulating GH, TNF-␣, norepinephrine, and angiotensin II were also significantly higher in CHF patients with cachexia than in those without cachexia. Interestingly, plasma ghrelin correlated positively with GH (rϭ0.28, PϽ0.05) and TNF-␣ (rϭ0.31, PϽ0.05) and negatively with body mass index (rϭϪ0.35, PϽ0.01). Conclusions-Plasma ghrelin was elevated in cachectic patients with CHF, associated with increases in GH and TNF-␣ and a decrease in body mass index. Considering ghrelin-induced positive energy effects, increased ghrelin may represent a compensatory mechanism under catabolic-anabolic imbalance in cachectic patients with CHF.

N-shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for p-type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm(2) V(-1) s(-1) (12.1 cm(2) V(-1) s(-1) on average) with small threshold voltages in solution-crystallized field-effect transistors.