Pilot studies and a literature review suggested that fear-avoidance beliefs about physical activity and work might form specific cognitions intervening between low back pain and disability. A Fear-Avoidance Beliefs Questionnaire (FABQ) was developed, based on theories of fear and avoidance behaviour and focussed specifically on patients' beliefs about how physical activity and work affected their low back pain. Test-retest reproducibility in 26 patients was high. Principal-components analysis of the questionnaire in 210 patients identified 2 factors: fear-avoidance beliefs about work and fear-avoidance beliefs about physical activity with internal consistency (alpha) of 0.88 and 0.77 and accounting for 43.7% and 16.5% of the total variance, respectively. Regression analysis in 184 patients showed that fear-avoidance beliefs about work accounted for 23% of the variance of disability in activities of daily living and 26% of the variance of work loss, even after allowing for severity of pain; fear-avoidance beliefs about physical activity explained an additional 9% of the variance of disability. These results confirm the importance of fear-avoidance beliefs and demonstrate that specific fear-avoidance beliefs about work are strongly related to work loss due to low back pain. These findings are incorporated into a biopsychosocial model of the cognitive, affective and behavioural influences in low back pain and disability. It is recommended that fear-avoidance beliefs should be considered in the medical management of low back pain and disability.
Nanoscale structures can be highly strained because of confinement effects and the strong influence of their external boundaries. This results in dramatically different electronic, magnetic and optical material properties of considerable utility. Third-generation synchrotron-based coherent X-ray diffraction has emerged as a non-destructive tool for three-dimensional (3D) imaging of strain and defects in crystals that are smaller than the coherence volume, typically a few cubic micrometres, of the available beams that have sufficient flux to reveal the material's structure. Until now, measurements have been possible only at a single Bragg point of a given crystal because of the limited ability to maintain alignment; it has therefore been possible to determine only one component of displacement and not the full strain tensor. Here we report key advances in our fabrication and experimental techniques, which have enabled diffraction patterns to be obtained from six Bragg reflections of the same ZnO nanocrystal for the first time. All three Cartesian components of the ion displacement field, and in turn the full nine-component strain tensor, have thereby been imaged in three dimensions.
Academics across the world face increasing pressure to publish. Research shows that writing retreats have helped by creating dedicated writing time and building collegiality. A new form of 'structured' writing retreat was created to increase its impact by taking a community of practice approach. This paper reports on an evaluation, funded by the British Academy, in which participants were interviewed one year after structured retreat. They reported many changes in their approaches to writing and in their sense of themselves as writers and some of these changes were sustained on return to campus. This paper argues that structured retreat increases learning through participation and helps academics to mainstream writing in their lives and careers. We conclude by suggesting that, since publishing is a mainstream academic activity, it makes sense to mainstream this intervention in academic careers.
The fabrication of an ultraviolet photodiode employing a single ZnO tetrapod nanocrystal is reported. This diode structure is prepared by depositing W and Pt electrodes to form Ohmic and Schottky contacts, respectively. Dark current-voltage measurements show rectifying behavior. The properties of the metal-semiconductor interface are studied with above and below band gap illumination. It is found that with increasing UV excitation the device converts from a rectifying to an Ohmic behavior. This effect is attributed to a flattening of the energy bands due to the migration of photogenerated carriers within the space charge region at the metal-semiconductor interface.
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