In this work, the pure ZnO and Sn doped ZnO thin films with different volume ratios (2, 4, 6, and 8V/V) of tin chloride have been successfully prepared by using sol-gel method. The structural properties were investigated by using X-ray diffraction (XRD), Scanning electron microscope (SEM), and Atomic force microscope (AFM). The results showed that, pure ZnO and Sn doped ZnO thin films have polycrystalline in nature with hexagonal structure. The structure have different plane at (1 1 1),(0 0 2),(1 0 1),(1 0 2),(1 1 0),(1 0 3),(1 1 2) belong to 2θ of 31.64, 34.30,36.13, 47.43, 56.49, 62.73, 67.83 respectively. The orientation of (002) at 2θ = 34.30 has a narrow FWHM, low strain, and crystalline size equal to 4.913, 3.683, 3.686, 2.455, and4.911 respectively for pure, Sn doped ZnO. Particle shapes were spherical granules morphology for all samples. The AFM images showed that the size of the grains on the surface of thin films increases with the increase in the concentration of impurity which agreement with the SEM results.

In this work, pure Zinc oxide and tin doped Zinc oxide thin films nanoparticles with various volume concentrations of 2, 4, 6, and 8V/V% were prepared by using the sol-gel method. The optical properties were investigated by using UV-Visible spectroscope, and the value exhibits the direct allowed transition. The average of transmittance was around ~(17-23) %in visible region. The optical energy band gap was calculated with wavelength (300-900) nm for pure ZnO and Sn doped ZnO thin films which decreases with increasing concentration from 3.4 eV to 3.1 eV respectively and red shift. The real dielectric(εr) and the imaginary dielectric εiare the same behavior of the refractive index(n) the extinction coefficient (k) respectively. The optical limiting properties were studied by using an SDL laser with a wavelength of 235 nm. ZnO and doping thin films an found efficient as optic limiting and depend on the concentration of the all samples.