The CdS:Cl thin films have been prepared using thermally evaporated, CdCl 2 -mixed CdS powder at 200°C substrate temperature. The percentage of CdCl 2 in the mixture varied from 0% to 0.20%. The electrical properties and the grain size of the deposited films were investigated. The results show that light doping, resistivity, carrier concentration, and mobility follow Seto's model for polycrystalline material. However, with heavy doping, these properties undergo a saturation trend. The saturation behavior can be understood in terms of the rapid formation of the A-center complexes in the films. The deposited films were annealed at 250°C and 300°C.The resistivity of pure and lightly doped CdS films increased with annealing temperature, whereas carrier concentration and mobility in these films decreased. However, for the higher doping concentrations, the resistivity decreased, whereas carrier concentration and mobility showed improvement. These changes in electrical properties of the deposited films with annealing and doping concentration are attributed to a reduction in the lattice defect sites in CdS upon annealing. The experimental results are interpreted in terms of a modified version of Seto's model for polycrystalline materials.
Cadmium doped Tin Oxide Thin Films have been prepared by Spray Pyrolysis Method on glass substrates at 350°C.Structural, electrical and optical properties have been measured. From XRD it is found that films deposited are crystalline in nature with tetragonal structure having lattice constant a=b=3.86 A° and c=5.62A°. Hall effect measurements show that films prepared are ofn-type and the carrier concentration (1O18 cm3 ) and room temperature conductivity decreases with the increases in cadmium concentration in the films. Activation energy has been calculated from conductivity measurements and it was found that conduction within the temperature range we have measured is due to hoping of carriers through the spectrum of localized states. Band gap of the un-doped films calculated from transmission spectrum is about 3 .1 eV and the value decrease slightly with the addition of cadmium. The refractive index, extinction coefficient, real and imaginary parts of the dielectric constant have been calculated from the optical spectra. The refractive index decreases with photon energy and also decreases slightly with cadmium concentration while extinction coefficient increases with photon energy.
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