Doping can profoundly affect the electronicand optical-structure of semiconductors. Here we address the effect of surplus charges on nonradiative (NR) exciton and trion decay in doped semiconducting single-wall carbon nanotubes. The dependence of exciton photoluminescence quantum yields and exciton decay on the doping level, with its characteristically stretchedexponential kinetics, is attributed to diffusionlimited NR decay at charged impurity sites. By contrast, trion decay is unimolecular with a rate constant of 2.0 ps −1 . Our experiments thus show that charged impurities not only trap trions and scavenge mobile excitons but that they also facilitate efficient NR energy dissipation for both.
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