Motivation has formed a core strand of research in music education, reflecting its importance in educational psychology and other skill-based performance domains. Understanding motivation is crucial for explaining students’ achievement, performance, well-being, and intentions to continue participation in (or drop out of) music learning throughout school and into adulthood. In the present study, we addressed the need to better understand motivation in music education by examining the impact of psychological needs satisfaction and frustration in a high school orchestra program. Psychological needs—a core component of self-determination theory—have considerable explanatory power in other life domains and educational settings and are the focus of recent attention in music education. Participants ( N = 704) were surveyed in orchestra programs in three schools in the midwestern United States. Structural equation modeling was used to examine the effects of psychological needs satisfaction and frustration. The model explained substantial variance on three key outcomes: practice time (22%), intentions to continue participating in the orchestra program (45%), and global-self esteem (34%). The results point to psychological needs satisfaction and frustration as key elements of music education in which teachers might intervene to improve these outcomes as well as students’ learning, engagement, and psychological well-being more broadly.

We propose a silicon Fabry–Perot planar waveguide modulator structure consisting of two Bragg reflectors to form the cavity. The Bragg reflectors are nanoscale trenches in the waveguide fabricated using electron beam lithography and reactive ion etching. Compared to conventional waveguide modulator designs, large modulation depth can be achieved with much smaller modulator length using high-finesse Fabry–Perot cavity, leading to much less loss and higher speed. This modulator design can also be utilized as an externally tunable spectral filter.

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The view, opinions end/or findings contained in this report are those of the ar (s) and should not be construed as an official Departmient. of the Army 1008 g volc. or decision, unless so des anted by other documentation.Approved for public release; distribution unlimmited.Theulrafstchaacerstis f cysaflnesiicon metal-semiconductor-meta (MSM) phokodloes with finger widths and spacings donto 200 nMmsbjected to fe1 oe_ n otca -e .1 . excitations, was elci-picsmln system. Electricalrspne wit ful-width at hafnxmmas short as 3.7 ps, at a corsodn 31 dEbnwdt f10 Hwr generated by violet-light excitation. T7hese diodes are the fastest silicon photod-2etectors reported to date. Detailed bias and light-intensilty dependenc of the diode response has been measured These resuts are used to obtain the veloci~ reltin of electron in silicon And to demonstrate the ideal transit-time-limited response of the= 94-21055