We have performed a study of thermal graphitization of SiC (0001) surface in the high-purity molecular beam of Si atoms obtained from a controllable source. With the aid of Si beam, we have been able to achieve the semi-equilibrium reaction conditions and to control the growth rate of graphene film freely until complete stop of the graphitization, at the test temperature of 1350 °C. Samples treated in Si beam are characterized by larger and homogeneous areas of graphene having uniform thickness, and much improved crystallographic ordering. This is attributed mainly to the improved buffer layer structure. The buffer layer shows neither disordered regions, nor point defects, which are prevalent in UHV-annealed samples. Significantly smaller concentrations of other surface defects are also observed. The used approach is a promising alternative to more commonly used buffer gas graphitization methods. Apart from the precise control for process parameters and very high process purity, it also allows for a co-deposition of other atoms at the growth stage.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.