A matter of doping: Graphene nanoribbons (GNRs) were generated through an on‐surface bottom‐up synthesis and selectively doped at their edges by introducing nitrogen atoms in the precursor monomers. While the size of the band gap of 2.8 eV remains almost unchanged upon N substitution, a linear shift of the band structure is observed and corresponds to n‐type doping (see picture; CB=conduction band and VB=valence band).
Eine Frage der Dotierung: Graphen‐Nanobänder (GNRs) wurden auf einer Oberfläche in einer Bottom‐up‐Synthese hergestellt und selektiv an den Ecken durch Einführen von Stickstoffatomen in den Vorstufen dotiert. Während die Bandlückengröße von 2.8 eV durch die N‐Substitution beinahe unverändert bleibt, wird eine lineare Verschiebung der Bandstruktur beobachtet, die einer n‐Dotierung entspricht (siehe Bild; CB=Leitungsband, VB=Valenzband).
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