Spintronics materials have recently been considered for radio-frequency devices such as oscillators by exploiting the transfer of spin angular momentum between a spin-polarized electrical current and the magnetic nanostructure it passes through. While previous spin-transfer oscillators (STOs) were based on in-plane magnetized structures, here we present the realization of an STO that contains a perpendicular spin current polarizer combined with an in-plane magnetized free layer. This device is characterized by high-frequency oscillations of the free-layer magnetization, consistent with out-of-plane steady-state precessions induced at the threshold current by a spin-transfer torque from perpendicularly polarized electrons. The results are summarized in static and dynamic current-field state diagrams and will be of importance for the design of STOs with enhanced output signals.

We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a threeterminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the ns range. Our results show that SOT-MRAM allows fast

In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43nW), narrow linewidth (down to 10MHz), spin transfer induced microwave emission at frequencies up to 14GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power.

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This paper deals with a new MRAM technology whose writing scheme relies on the Spin Orbit Torque (SOT). Compared to Spin Transfer Torque (STT) MRAM, it offers a very fast switching, a quasi-infinite endurance and improves the reliability by solving the issue of "read disturb", thanks to separate reading and writing paths. These properties allow introducing SOT at all-levels of the memory hierarchy of systems and adressing applications which could not be easily implemented by STT-MRAM. We present this emerging technology and a full design framework, allowing to design and simulate hybrid CMOS/SOT complex circuits at any level of abstraction, from device to system. The results obtained are very promising and show that this technology leads to a reduced power consumption of circuits without notable penalty in terms of performance.

International audienceThe microwave emission linewidth of spin transfer torque nano-oscillators is closely related to their phase and amplitude noise that can be extracted from the magnetoresistive voltage signal V(t) using single shot time domain techniques. Here we report on phase and amplitude noise studies for MgO based magnetic tunnel junction oscillators. The analysis of the power spectral densities allows one to separate the linear and nonlinear contributions to the phase noise, the nonlinear contribution being due to the coupling between phase and amplitude. The coupling strength as well as the amplitude relaxation rate can be directly extracted

We have prepared regular square arrays of Ni and Ag dots with typical diameter and thickness approaching characteristic low-T c superconducting length scales. The transport properties of Nb films, grown on top of these dots, were studied in a wide temperature and magnetic-field range. The Ni dots act as pinning centers, thereby producing oscillations in the field dependence of the resistance and critical current of the Nb film. The periodicity of the oscillations corresponds to the matching field of the dots lattice spacing. Such an oscillatory behavior is absent for arrays of nonmagnetic Ag dots. The comparison between the two types of arrays implies a magnetic origin of the enhanced pinning effect.

Single-shot, time-resolved measurements are presented to investigate the temporal coherence of the microwave emission for MgO based magnetic tunnel junction spin torque oscillators. The time-domain data reveal that the steady state regime obtained from frequency-domain analysis can be subdivided into two regimes as a function of spin polarized current amplitude. According to these two regimes, two mechanisms that limit the temporal coherence are identified. At low current, extinctions of the steady state oscillations lead to a very short coherence time on the order of a few nanoseconds, while at higher current, the extinctions vanish and the coherence time saturates around 40 ns. As an important result it is shown that the latter is limited by frequency fluctuations. Quenching these frequency fluctuations suggests an intrinsic linewidth that is by a factor of 20 below the one of the free running oscillator.