Using the sensitivity of optical second harmonic generation to currents, we demonstrate the generation of 250-fs long spin current pulses in Fe=Au=Fe=MgOð001Þ spin valves. The temporal profile of these pulses indicates ballistic transport of hot electrons across a sub-100 nm Au layer. The pulse duration is primarily determined by the thermalization time of laser-excited hot carriers in Fe. Considering the calculated spin-dependent Fe=Au interface transmittance we conclude that a nonthermal spin-dependent Seebeck effect is responsible for the generation of ultrashort spin current pulses. The demonstrated rotation of spin polarization of hot electrons upon interaction with noncollinear magnetization at Au=Fe interfaces holds high potential for future spintronic devices. DOI: 10.1103/PhysRevLett.119.017202 Optimization and control of spin currents (SC) and their interaction with magnetic constituents in heterostructures on a femtosecond time scale is key for future terahertz spintronics applications. Although electronic transport through a ferromagnet (FM), as described by Mott's two current model [1], generates a spin-polarized current, its density is intrinsically limited by Joule losses. The discovery of the spin-dependent Seebeck effect (SdSE), where thermal gradients over a bulk FM [2] or across an interface to a normal metal [3] generate SCs, opened a path towards overcoming such limitations. Indeed, shortlived thermal gradients can produce short (∼100 ps) SC pulses at densities exceeding the static Joule limit, as recently demonstrated upon laser excitation of spin-valve structures [4].Creating highly energetic electrons [5][6][7][8][9], femtosecond laser excitation is promising for SC pulse generation on subpicosecond time scales, before the electron-electron [9] and electron-lattice [8] equilibration is reached.

A dynamical method for simulating steady-state conduction in atomic and molecular wires is presented which is both computationally and conceptually simple. The method is tested by calculating the current-voltage spectrum of a simple diatomic molecular junction, for which the static Landauer approach produces multiple steady-state solutions. The dynamical method quantitatively reproduces the static results and provides information on the stability of the different solutions.

A new method for investigating the dynamics of atomic magnetic moments in current-carrying magnetic point contacts under bias is presented. This combines the non-equilibrium Green's function (NEGF) method for evaluating the current and the charge density with a description of the dynamics of the magnetization in terms of quasistatic thermally-activated transitions between stationary configurations. This method is then implemented in a tight-binding (TB) model with parameters chosen to simulate the main features of the electronic structures of magnetic transition metals. We investigate the domain wall (DW) migration in magnetic monoatomic chains sandwiched between magnetic leads, and for realistic parameters find that collinear arrangement of the magnetic moments of the chain is always favorable. Several stationary magnetic configurations are identified, corresponding to a different number of Bloch walls in the chain and to a different current. The relative stability of these configurations depends on the geometrical details of the junction and on the bias, however we predict transitions between different configurations with activation barriers of the order of a few tens of meV. Since different magnetic configurations are associated to different resistances, this suggests an intrinsic random telegraph noise at microwave frequencies in the I-V characteristics of magnetic atomic point contacts at room temperature. Finally, we investigate whether or not current induced torques are conservative

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs|GaP|CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface. DOI: 10.1103/PhysRevB.95.060403Antiferromagnetic (AF) materials are magnetically ordered compounds where two or more spin sublattices compensate each other, resulting in a vanishing macroscopic magnetization. As a consequence, an antiferromagnet does not produce stray field, and closely separated AF nanostructures are not magnetostatically coupled. In addition, the typical time scale for the dynamics of the antiferromagnetic order parameter, the Néel vector, is set by the AF resonance frequency, which is typically much larger than that of a ferromagnet, and may approach the THz range [1]. It is then not surprising that antiferromagnets have recently received considerable attention as a materials platform for magnetic data storage, logic, and high-frequency applications [2]. One limitation of the AF materials class is the fact that most antiferromagnets are insulators, while often spintronics devices require driving currents through the structure.Recently, metallic CuMnAs has been proposed as a good candidate for AF spintronics applications [3]. Tetragonal CuMnAs is antiferromagnetic at room temperature and can be grown epitaxially on GaP. Furthermore, it has been shown that one can manipulate the Néel vector of CuMnAs thin films by electric current pulses [4]. This is explained as the result of atomically staggered spin-orbit torques (SOTs), 1 which accompany the current flow in antiferromagnets where the global inversion symmetry is broken due to the presence of two spin sublattices forming inversion partners [5]. The reported Néel temperature of CuMnAs is (480 ± 5) K [6], while the lattice parameters of bulk tetragonal CuMnAs are a = b = 3.820Å and c = 6.318Å. According to density functional theory (DFT) calculations, CuMnAs in its AF ground state is metallic, but it has a rather low density of states at the Fermi level [3]. Here, we investigate whether such a unique AF metal can be used in standard magnetic tunnel junctions (MTJs) and demonstrate that these can be written by spin-transfer torques (STTs) and read by standard tunnel magnetoresistance (TMR). * stamenom@tcd.ie 1 These are also referred to ...

To date the realization of magnetoresistive RAM (MRAM) and magnetoelectric RAM (MeRAM) devices relies primarily on ultrathin ferromagnetic-based (FeCoB/MgO) magnetic tunnel junctions. On the other hand, the Heusler family of intermetallics is considered very promising for spintronic applications. Nevertheless, the voltage controlled magnetic anisotropy (VCMA) in ultrathin Heusler-based magnetic-tunnel junction stacks remains unexplored. Here, using the ferrimagnetic Heusler Mn 3 Ga as a prototype system, we report ab initio calculations of the electric field modulation of magnetism in the Ir/Mn 3 Ga/MgO heterostructure. The trilayer structures with one/three monolayers Ir cap and Mn-Mn termination exhibit large perpendicular magnetic anisotropy (PMA) in contrast to these with Mn-Ga termination which yield in-plane magnetization orientation. We predict giant VCMA coefficients whose magnitude and sign depend on both the interface termination and the Ir cap thickness. The underlying atomistic mechanism lies on the electric-field-induced shifts of the spin-orbit coupling energies of the spin-polarized Ir/d-orbitals with different orbital angular momentum symmetries. Our work paves the way for exploiting the unique magnetic properties of ferrimagnetic Heusler compounds for the next generation MeRAM devices.

In a straightforward application of molecular nanospintronics to quantum computing, single-molecule spin transistors can be used to measure nuclear spin qubits. Conductance jumps accompany electronic spin flips at the so-called anticrossings between energy levels, which take place only at specific magnetic fields determined by the nuclear spin state. To date, the only molecular hardware employed for this technique has been the terbium(III) bis(phthalocyaninato) complex. Here we explore theoretically whether a similar behavior is expected for a highly stable molecular spin qubit, the vanadium tris-dithiolate complex [V(α-CS)]. We consider such a molecule between two gold electrodes and determine the spin-dependent conductance. We verify that the transport channel in experimental conditions does not overlap with the occupied spin orbitals, indicating that the spin states may survive in the conduction regime. We validate the robustness of the theoretical methodology by studying two chemically related vanadium complexes and offer some criteria to guide the experiments.

We demonstrate numerically the existence of a spin-motive force acting on spin-carriers when moving in a time and space dependent internal field. This is the case for electrons in a onedimensional wire with a precessing domain wall. The effect can be explained solely by adiabatic dynamics and is shown to exist for both classical and quantum systems.