The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS 2 an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogeneous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the bettercharacterized ML materials MoSe 2 and WSe 2 . In this work, we show that encapsulation of ML MoS 2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T ¼ 4 K. Narrow optical transition linewidths are also observed in encapsulated WS 2 , WSe 2 , and MoSe 2 MLs. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high-quality samples. Among the new possibilities offered by the well-defined optical transitions, we measure the homogeneous broadening induced by the interaction with phonons in temperature-dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.

Charged excitons, or X ± -trions, in monolayer transition metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X 0 they dominate the emission spectrum at low and elevated temperatures. We use charge tunable devices based on WSe2 monolayers encapsulated in hexagonal boron nitride, to investigate the difference in binding energy between X + and X − and the X − fine structure. We find in the charge neutral regime, the X 0 emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X 0 and an excited state of the X 0 are visible. In the n-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6 meV for X − is observed. We present a symmetry analysis of the different X + and X − trion states and results of the binding energy calculations. We compare the trion binding energy for the n-and p-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X + and X − trions as well as the fine structure of the X − state can be related to the short-range Coulomb exchange interaction between the charge carriers. arXiv:1705.02110v2 [cond-mat.mes-hall] 9 May 2018