We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity∼12.2V/W with a 3dB bandwidth∼42GHz. We utilize Au split-gates with a∼100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules.The ever-growing demand for global data traffic[1] is driving the development of next generation communication standards [2,3]. The increasing numbers of connected devices[4], the need for new functionalities, and the development of high-performance computing [5,6] require optical communication systems performing at higher speeds, with improved energy-efficiency, whilst maintaining scalability and cost-effective manufacturing. Si photonics[7-9] offers the prospect of dense (nanoscale) integration[10] relying on mature, low-cost (based on complementary metal-oxide-semiconductor (CMOS) fabrication processes) manufacturing [8,9], making it one of the key technologies for short-reach (<10km) optical interconnects[11] beyond currently employed lithium niobate[12] and indium phosphate[13]. A variety of functionalities have been developed and demonstrated in Si photonics for local optical interconnects[11]. Electro-optic modulators based on carrier-depletion (phase-modulation) in Si[14, 15] or the Franz-Keldysh effect[16] (amplitude-modulation) in strained Si-Ge[17, 18] encode information into optical signals at telecom wavelengths (λ =1.3-1.6µm). On the receiver side, Ge[19] or bonded III-V[20, 21] photodetectors (PD) are needed for optical-to-electrical signal conversion, since the telecom photon energies are not sufficient for direct (band-to-band) photodetection in Si[22].On-chip integrated Ge PDs [23][24][25][26][27] are standard components in Si photonics foundries [8,9,22]. Their external responsivities (in A/W), R I = I ph /P in , where I ph is the photocurrent and P in is the incident optical power, can exceed 1A/W [8,23] and their bandwidth can reach 60GHz [25][26][27]. Following the development of high temperature (> 600 • C) [19] heterogeneous integration of Ge-on-Si using epitaxial growth and cyclic thermal annealing [19,28,29], the concentration of defects and threading dislocations in Ge epilayers and at Si/Ge interfaces can be reduced [19], resulting in low (<10nA[9, 27]) dark current in waveguide integrated Ge p-i-n photodiodes [24,27]. However, Ge-on-Si integration is a complex process [19,22,29], as the lattice mismatch between Si and Ge [19], ion implantation [23,25], thermal budget (i.e. thermal energy transfer to the wafer) management [22], and the non-plan...

Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (≥5000 cm 2 V –1 s –1 ) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapor deposition (CVD) of single layer graphene (SLG) matrices comprising up to ∼12000 individual single crystals, grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ∼80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ∼5000 cm 2 V –1 s –1 . We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ∼0.25, 0.45, 0.75, 1 dB V –1 for device lengths ∼30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hexagonal boron nitride (hBN) is used to protect SLG during plasma-enhanced CVD of Si 3 N 4 , ensuring reproducible device performance. The processes are compatible with full automation. This paves the way for large scale production of graphene-based photonic devices.

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p−n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 10 10 cm −2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K −1 , enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.