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A detailed study of the atomic layer deposition of Al 2 O 3 on Ru film surfaces by means of in situ photoelectron spectroscopy has been carried out. We discuss how the atomic layer deposition reaction between trimethylaluminum (TMA) and H 2 O is affected by the Ru substrate. We found that RuO 2 , when present on the substrate surface, participates in the reaction with TMA and the substrate reduces to Ru. The reduction of oxygencontaining substrates to Ru is solely due to the direct reaction of the Al precursor with the substrate through adsorption on active sites. The final Al 2 O 3 /Ru structures have an interface depleted from oxygen and show different band offsets depending on the initial chemistry.

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We show a comparative study of the TiO2 ALD with TTIP and either O2 or O2-plasma on Si/SiO2 substrates. In particular we compare the surface morphology and crystalline phase by means of Atomic Force Microscopy (AFM), X-ray Photoelectron Spectroscopy (XPS) and X-ray Absorption Spectroscopy (XAS) for different O2-plasma procedures upon changing the time between cycles and the N2-purging pressure. The AFM images show that already these parameters may induce structural changes in the TiO2 films grown by ALD, with the formation of crystallites with average lateral width varying between 15 and 80 nm. By means of XAS we also found that the crystallites have mixed anatase and rutile crystalline phases and that smaller crystallites have a greater rutile component than the larger ones.