The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.
In order to achieve the next generation of nanometer-sized
electronic
devices, a detailed understanding and control of electrical transport
is essential. One approach to fabricate nanodevices based on functional
components is to assemble a 3D array of nanoparticles on electrode
structures, while another method is to bridge the gap between two
nanoelectrodes by a single nanoparticle. Here we report on electronic
transport measurements of biphenylpropanethiol-capped gold nanoparticles
with a diameter of 4 nm used as functional units studied in both setups.
The resulting conductance measurements reveal different types of transport
mechanisms depending on temperature, such as hopping, superexchange
coupling, and tunneling. In addition, Coulomb blockade behavior is
shown in the single-nanoparticle device at 4 K and at room temperature.
Moreover, a discontinuity in the conductance as a function of temperature
is discussed in terms of a possible structural crossover in particle
morphologies.
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